Gorbatyuk Andrey Vasilyevich

Dr.Sci., Professor

agor.pulse@mail.ioffe.ru

Gorbatyuk Andrey V., born 1946, postgrad at Ioffe Physical-technical Institute, received PhD in 1981 and Dr. Sci. in physics and maths in 2003. He has been a full-time employee at the Ioffe Institute, Power laboratory, since 1979, successively in post positions from junior to principal researcher (currently), and also – a part-time lecturer at Saint Petersburg Polytechnical University in 1996-2013. Together with the laboratory team he participated in the formation of the new R&D-trend “Novel principles of high-power commutation by semiconductor devices”, proposed the original idea of a reversely-switched dynistor (RSD) – the giga-watt switch of microsecond range, and described theoretically its physical mechanisms.  He also developed a theoretical study for dynamics and stability of charge and heat transport processes in power semiconductor devices and integrated circuits, and is a recognized expert in these fields. Recently, his interests have focused on problems of safe operation of semiconductor electrical and optronic pulse-repetitive switches of ultimate power.

ru.Wikipedia: Андрей Васильевич Горбатюк

Fields of interest:

  • Theory and simulation of power semiconductor electronic and optronic devices, including integrated circuits
  • Search for new mechanisms of ultra-fast performances of power devices
  • Instability problems and safe operating conditions in pulse power devices
  • Nonlinear physics, self-organization and pattern formation in Solid-St. Electronics

Professional career:

  1. Full-time employee at Ioffe Physico-technical Institute since 1979, successively in scientific post positions from junior researcher (1980) to principal researcher (2014 till now)
  2. 1976-1979: Senior researcher at V.I. Lenin All-Russia Electrotechnical Institute, High-Voltage Division, Istra-2, Moscow Region, USSR
  3. 1971-1975: Post-graduate  student at A.F. Ioffe Physico-Technical Institute, Leningrad, USSR
  4. 1969-1971: Research Engineer at the Institute of Electronics of the Odessa Politechnical Institute, Odessa, Ukrainian Republic, USSR.

Academic titles:

  • Professor (from Supreme attestation commission of Russia, 2011)
  • Certified Senior Researcher in Physics (from Supreme attestation commission of the USSR, 1988)

Education, degrees :

  • Doctor of Science in physics and maths (from the Ioffe Institute, 2003)
  • Ph.D. in physics and maths. (from the Ioffe Institute, 1981)
  • Electronic technology engineer (from the Odessa Politechnical Institute, Odessa, Ukrainian Republic, USSR, 1969)

Teaching :

  • Saint Petersburg Polytechnical University, Faculty of Physics and Technology, Department of Solid State Electronics: graduate courses “Physics of Semiconductor Devices“ (2004-2006), “Instability and Stratification of Current in Semiconductor Structures“ (2004-2012), “Basic Microelectronics” (2012-2013)  —  part-time professor (2004-2013), author of the manual (2009)
  • Saint Petersburg Electro-technical  University (LETI), (2006-2009) – invited lecturer, co-author of the electronic manual (2011) 
  • Saint Petersburg Polytechnical University, Faculty of Physics and Technology, Department of Solid State Electronics (1996-2003): graduate course “Physics of Semiconductor Devices“ –  part-time associated-professor
  • The Ioffe Institute – supervisor of academic degree applicants (PhD defended in 1990, 1992, 1993, 2012)
  • The Ioffe Institute, International winter school (2003) – invited speaker

Russian grants, contracts:

  • RFBR (4): No. 07-08-00689; No. 13-08-00474, No. 13-07-00943, No 16-08-01292
  • RSF: No. 14-29-00094
  • State Contract No. 02.526.12.6016 (Federal Agency for Science and Innovations, 2007/12 y.)

The Ioffe Service:

              Member of the dissertation councils:

  • K 003.23.01   “Semiconductors and dielectrics” (1985-2005)
  • Д 002.205.02  “Semiconductors ” (2005 – 2019)
  • 34.01.02  “Semiconductors ” (2020 –  till present)

Visiting researcher:

  • Institute of Applied Physics at Muenster University, Germany (in 1991 and regularly in 1993-2003. Total – 2 years)

Selected publications:

1. Gorbatyuk A.V., Ivanov B.V. Inhomogeneous injection and heat-transfer processes in reversely switched dynistors operating in pulse-frequency repetition modes with a limited heat sink, Semiconductors, v. 53, No. 4, p. 524-529 (2019)

2. Gorbatyuk A.V., Ivanov B.V. Simulation of reversely switched dynistors in modes with lowered primary-ignition threshold, Semiconductors, v. 51, No 6, p. 803-811 (2017)

3. Slipchenko S. O., Podoskin A. A., Pikhtin N. A., Tarasov I. S., Gorbatyuk A. V. Model of steady-state injection processes in a high-power laser-thyristor based on heterostructure with internal optical feedback, IEEE Transactions on Electron Devices, v. 62, No. 1, pp. 149-154 (2015)

4. Gorbatyuk A.V., Gusin D.V., Ivanov B.V. Theory and simulation of combined mechanisms limiting the safe operating area power semiconductor microelectronic switches, Semiconductors, v. 47, No. 3, p. 396-405 (2013)

5. Горбатюк А. В. Неустойчивости и расслоения тока в полупроводниковых структурах (учеб. пособие), СПб.: Изд-во Политех. ун-та, 79 с (2009)   ISBN 978-5-7422-2340-5

6. Gorbatyuk A.V. Latent spatial instability of current in power bipolar switches,
Technical Physics Letters, v. 32, No. 12, p. 999-1002 (2006) 

7. Niedernostheide F.-J., Schulze H.-J., Freyd O., Bode M., Gorbatyuk A.V. Realization of a neural algorithm by means of front propagation in a thyristor-based hybrid system, Chaos, Solitons & Fractals, v. 17, No. 2-3, p. 255-262 (2003)

8. Gorbatyuk A. V., Niedernostheide F. J. Spatial current-density instabilities in multilayered semiconductor structures, Physical Review B, v. 65, No. 24, ArtNo#245318, 15 p. (2002)

9. Gorbatyuk A. V., Grekhov I. V., Nalivkin A. V. Theory of quasi-diode operation of Reversely Switched Dinistors // Solid-State Electronics,  v. 31, No. 10, pp. 1483-1491 (1988)

10. Grekhov I. V., Gorbatyuk A. V., Kostina L. S., Korotkov S. V., Jakovtchuk N. S. Superpower switch of microsecond range, Solid-State Electronics, v. 26, No. 11, p. 1132 (1983).

Awards:

  • Bronze medal of the Exhibition of Achievements of National Economy USSR in 1986
  • USSR State Prize in Science and Technology in 1987