Below, the publications of the laboratory dated 2022 (irrespectively of whether these are indexed by the Russian Science Citation system) are listed. Total there are 36 entries as of end-December 2022.
- Толмачев,ВА; Жарова,ЮА; Ермина,АА; Большаков,ВО Исследование диэлектрических функций слоя наночастиц Ag на кремнии с помощью спектроэллипсометрии и спектрофотометрии 2022, Оптика и спектроскопия, т. 130, вып. 2, с. 254 DOI: http://dx.doi.org/10.21883/os.2022.02.51992.2668-21
- Lyublinsky,AG; Kardo-Sysoev,AF; Cherenev,MN; Vexler,MI Influence of DRSD operation cycle on the output pulse parameters 2022 IEEE Trans. on Power Electronics, v. 37, No. 6, Paper number:TPEL-Letter-2021-11-0472 [4 pages]. DOI: https://doi.org/10.1109/TPEL.2021.3139536
- Ivanov,M; Brylevskiy,V; Smirnova,I; Rodin,P Picosecond-range switching of high-voltage Si diode due to the delayed impact-ionization breakdown: Experiments vs simulations 2022, J. Appl. Phys., v.131, 1 ArtNo: #014502 DOI: http://dx.doi.org/10.1063/5.0077092
- Ложкина,ДА; Астрова,ЕВ; Румянцев,АМ Зависимость электрохимических параметров композитных SiO/C-анодов для литий-ионных аккумуляторов от состава и температуры синтеза 2022, ЖТФ, т.92, 3 DOI: http://dx.doi.org/10.21883/JTF.2022.03.52137.267-21
- Waltl,M; Knobloch,T; Tselios,K; Filipovic,L; Stampfer,B; Hernandez,Y; Waldhor,D; Illarionov,Yu; Kaczer,B; Grasser,T Perspective of 2D Integrated Electronic Circuits: Scientific Pipe Dream or Disruptive Technology? 2022, Adv. Mater. DOI: http://dx.doi.org/10.1002/adma.202201082
- Sverdlov,V; Seiler,H; El-Sayed,AM; Illarionov,Yu; Kosina,H Edge modes and their conductance in narrow nanoribbons of 2D materials in a topological phase 2022, Solid-State Electron., v.193 DOI: http://dx.doi.org/10.1016/j.sse.2022.108266
- Kononova,SV; Sapegin,DA; Gubanova,GN; Afanas’eva, NV; Didenko, AN; Popova, EN; Vlasova, EN; Svetlichnyi, VM; Volkov, AY; Vylegzhanina, ME; Zakharova, NV; Nechitailov, AA; Zelenina, NK New polyimide ionomers derived from 4,4-diamino[1,1-biphenyl]-2,2’disulfonic acid for fuel cell applications 2022, High Perform. Polym., v.34, No.8, pp.839-858 DOI: http://dx.doi.org/10.1177/09540083221093759
- Vasilev,A; Jech,M; Grill,A; Rzepa,G; Schleich,C; Tyaginov,S; Makarov,A; Pobegen,G; Grasser,T; Waltl,M TCAD Modeling of Temperature Activation of the Hysteresis Characteristics of Lateral 4H-SiC MOSFETs 2022, IEEE Trans. Electron Devices, v.69 DOI: http://dx.doi.org/10.1109/TED.2022.3166123
- Grill,A; John,V; Michl,J; Beckers,A; Bury,E; Tyaginov,S; Parvais,B; Chasin,AV; Grasser,T; Waltl,M; Kaczer,B; Govoreanu,B Temperature Dependent Mismatch and Variability in a Cryo-CMOS Array with 30k Transistors IEEE Int. Reliab. Phys. Symp. Proc., March 2022 DOI: http://dx.doi.org/10.1109/IRPS48227.2022.9764594
- Vandemaele,M; Kaczer,B; Tyaginov,S; Bury,E; Chasin,A; Franco,J; Makarov,A; Mertens,H; Hellings,G; Groeseneken,G Simulation Comparison of Hot-Carrier Degradation in Nanowire, Nanosheet and Forksheet FETs IEEE Int. Reliab. Phys. Symp. Proc., March 2022 DOI: http://dx.doi.org/10.1109/IRPS48227.2022.9764470
- Bury,E; Chasin,A; Kaczer,B; Vandemaele,M; Tyaginov,S; Franco,J; Ritzenthaler,R; Mertens,H; Weckx,P; Horiguchi,N; Linten,D Evaluating Forksheet FET Reliability Concerns by Experimental Comparison with Co-integrated Nanosheets IEEE Int. Reliab. Phys. Symp. Proc., March 2022 DOI: http://dx.doi.org/10.1109/IRPS48227.2022.9764526
- Knobloch,T; Illarionov,YY; Grasser,T Finding Suitable Gate Insulators for Reliable 2D FETs IEEE Int. Reliab. Phys. Symp. Proc., March 2022 DOI: http://dx.doi.org/10.1109/IRPS48227.2022.9764499
- Tyaginov,S; Afzalian,A; Makarov,A; Grill,A; Vandemaele,M; Cherenev,M; Vexler,M; Hellings,G; Kaczer,B On Superior Hot Carrier Robustness of Dynamically-Doped Field-Effect-Transistors IEEE Int. Reliab. Phys. Symp. Proc., March 2022 DOI: http://dx.doi.org/10.1109/IRPS48227.2022.9764568
- Tyaginov,S; Makarov,A; El-Sayed,AB; Chasin,A; Bury,E; Jech,M; Vandemaele,M; Grill,A; Keersgieter,AD; Vexler,M; Eneman,G; Kaczer,B Understanding and Modeling Opposite Impacts of Self-Heating on Hot-Carrier Degradation in n- and p-Channel Transistors IEEE Int. Reliab. Phys. Symp. Proc., March 2022 DOI: http://dx.doi.org/10.1109/IRPS48227.2022.9764515
- Банщиков,АГ; Илларионов,ЮЮ; Сутурин,СМ; Векслер,МИ; Соколов,НС Эпитаксиальные диэлектрические пленки фторида кальция нанометровой толщины на кремнии-(111) для барьерных слоев в СВЧ-приборах. Сборник статей XI Всероссийской конференции «Электроника и микроэлектроника СВЧ», с. 40-44, Санкт-Петербург, май-июнь 2022
- Knobloch,T; Uzlu,B; Illarionov,Y; Wang,Z; Otto,M; Filipovic,L; Waltl,M; Neumaier,D; Lemme,MC; Grasser,T Improving stability in two-dimensional transistors with amorphous gate oxides by Fermi-level tuning 2022, Nature Electronics, v.5, 356–366 DOI: http://dx.doi.org/10.1038/s41928-022-00768-0
- Illarionov,Y; Uzlu,B; Knobloch,T; Banshchikov,A; Sverdlov,V; Vexler,M; Sokolov,NS; Waltl,M; Wang,Z; Neumaier,D; Lemme,M; Grasser,T CVD-GFETs with Record-small Hysteresis Owing to 2nm Epitaxial CaF2 Insulators Dev. Res. Conf. (DRC), June 2022, Columbus, USA, 121-122
- Illarionov,Yu; Knobloch,T; Waltl,M; Smets,Q; Panarella,L; Kaczer,B; Schram,T; Brems,S; Cott,D; Asselberghs,I; Grasser,T Top Gate Length Dependence of Hysteresis in 300mm FAB MoS2 FETs “Graphene” July 2022, Aachen, Germany [1 page]
- Illarionov,Yu; Knobloch,T; Uzlu,B; Sokolov,NS; Lemme,MC; Grasser,T Highly stable GFETs with 2nm crystalline CaF2 insulators, Int’l Conf. Phys. 2D Crystals (ICP2DC6), October 2022, Yerevan, Armenia [1 page]
- Waldhoer,D; Manna,B; El-Sayed,A.M.B.; Knobloch,T; Illarionov,Y; Grasser,T Silicon-Impurity Defects in Calcium Fluoride: A First Principles Study IEEE 52nd Eur. Solid-St. Dev. Res. Conf. (ESSDERC), September 2022, Milan, Italy, 380-383 DOI: http://dx.doi.org/10.1109/ESSDERC55479.2022.9947104
- Банщиков,АГ; Векслер,МИ; Иванов,ИА; Илларионов,ЮЮ; Соколов,НС; Сутурин,СМ Пленки фторида кальция толщиной 2-10 нм на кремнии-(111): выращивание, диагностика, изучение сквозного токопереноса 2022 ФТП, вып. 9, с.888 DOI: http://dx.doi.org/10.21883/FTP.2022.09.53410.9885
- Rozhkov,A; Ivanov,M; Rodin,P The lock-on effect and collapsing bipolar Gunn domains in high-voltage GaAs avalanche p-n junction diode 2022, Solid State Commun., v.354 ArtNo: #114895 DOI: http://dx.doi.org/10.1016/j.ssc.2022.114895
- Иванов,МС; Рожков,АВ; Родин,ПБ Коллапсирующие домены Ганна как механизм самоподдержания проводящего состояния в обратносмещенных высоковольтных GaAs-диодах 2022, Письма ЖТФ, т.48, 20, с.31-34 DOI: https://doi.org/10.21883/PJTF.2022.20.53693.19326
- Рожков,АВ; Иванов,МС; Родин,ПБ Эффект самоподдержания проводящего состояния в обратносмещенных GaAs-диодах, переключаемых в режиме задержанного лавинного пробоя 2022, Письма ЖТФ, т.48, 16, с.25-29 DOI: https://doi.org/10.21883/PJTF.2022.16.53203.19271
- Ermina,AA; Solodovchenko,NS; Prigoda,KV; Levitskii,VS; Bolshakov,VO; Yu. Maximov,M; Koshtyal,YM; Pavlov,SI; Tolmachev,VA; Zharova,YA Silver particles embedded in silicon: The fabrication process and their application in surface enhanced Raman scattering (SERS) 2023, Appl. Surf. Sci., v.608 ArtNo: #155146 DOI: http://dx.doi.org/10.1016/j.apsusc.2022.155146
- Prigoda,K; Ermina,A; Bolshakov,V; Nazarov,D; Ezhov,I; Lutakov,O; Maximov,M; Tolmachev,V; Zharova,Yu The Array of Si Nanowires Covered with Ag Nanoparticles by ALD: Fabrication Process and Optical Properties 2022, Coatings, v.12, 11 ArtNo: #1748 DOI: https://doi.org/10.3390/coatings12111748
- Nazarov,D; Ezhov,I; Yudintceva,N; Shevtsov,M; Rudakova,A; Kalganov,V; Tolmachev,V; Zharova,Yu; Lutakov,O; Kraeva,L; Rogacheva,E; Maximov,M Antibacterial and Osteogenic Properties of Ag Nanoparticles and Ag/TiO2 Nanostructures Prepared by Atomic Layer Deposition 2022, J. Funct. Biomater., v.13, 2 ArtNo: #62 DOI: http://dx.doi.org/10.3390/jfb13020062
- Tolmachev,VA; Gushchina,EV; Nyapshaev,IA; Zharova,YA Spectroscopic ellipsometry study of dielectric functions of Ag films and chemically deposited layers of Ag nanoparticles on silicon 2022, Thin Solid Films, v.756 ArtNo: #139352 DOI: http://dx.doi.org/10.1016/j.tsf.2022.139352
- Li,G; Rumyantsev,A; Astrova,E; Maximov,M Growth of the Cycle Life and Rate Capability of LIB Silicon Anodes Based on Macroporous Membranes 2022, Membranes, v.12, 11 ArtNo: #1037 DOI: http://dx.doi.org/10.3390/membranes12111037
- Parfeneva,AV; Rumyantsev,AM; Lozhkina,DA; Maximov,MYu; Astrova,EV Influence of Fluoroethylene Carbonate in the Composition of an Aprotic Electrolyte on the Electrochemical Characteristics of LIB`s Anodes Based on Carbonized Nanosilicon 2022, Batteries, v.8, 8 ArtNo: #91 DOI: http://dx.doi.org/10.3390/batteries8080091
- Lozhkina,DA; Ulin,VP; Kompan,ME; Rumyantsev,AM; Kondrashkova,IS; Krasilin,AA; Astrova,EV Influence of the Ni Catalyst on the Properties of the Si-C Composite Material for LIB Anodes 2022, Batteries, v.8, 8 ArtNo: #102 DOI: http://dx.doi.org/10.3390/batteries8080102
- Глебова,НВ; Краснова,АО; Нечитайлов,АА; Томасов,АА; Зеленина,НКДеградация поверхности структурно-модифицированной платиноуглеродной компоненты электродов водородного топливного элемента. 2022, Электрохимия, т.58, 6, стр.307-313 DOI: https://doi.org/10.31857/S042485702205005X Glebova,NV; Krasnova,AO; Nechitailov,AA; Tomasov,AA; Zelenina,NK Degradation of Surface of Structurally Modified Platinum-Carbon Component of Electrodes of Hydrogen Fuel Cell 2022, Russ. J. Electrochem., v.58, No.6, pp.513-519 DOI: http://dx.doi.org/10.1134/S1023193522050056
- Primachenko,ON; Kulvelis,YV; Odinokov,AS; Glebova,NV; Krasnova,AO; Antokolskiy,LA; Nechitailov,AA; Shvidchenko,AV; Gofman,IV; Marinenko,EA; Yevlampieva,NP; Lebedev,VT; Kuklin,AINew Generation of Compositional Aquivion-Type Membranes with Nanodiamonds for Hydrogen Fuel Cells: Design and Performance 2022, Membranes, v.12, No.9 ArtNo: #827 DOI: http://dx.doi.org/10.3390/membranes12090827
- Касцова,АГ; Глебова,НВ; Нечитайлов,АА; Краснова,АО; Пелагейкина,АО; Елисеев,ИА Электронная спектроскопия графена, полученного методом ультразвукового диспергирования 2022, Письма ЖТФ, т.48, вып.24, стр.23-25 DOI: http://dx.doi.org/10.21883/PJTF.2022.24.54019.19268
- El-Sayed,A; Jech,M; Waldhör,D; Makarov,A; Vexler,MI; Tyaginov,S Structure, electronic properties, and energetics of oxygen vacancies in varying concentrations of SixGe1−xO2 2022, Phys. Rev. Materials, vol. 6, Paper no. 125002 DOI: https://doi.org/10.1103/PhysRevMaterials.6.125002
- Kompan, ME; Gorbatyuk, AV; Malysgkin, VG; Shataev VA;Grebenshchikova, E A;Yakovlev, YUP Cascade of impedance instabilities of Pd structure – surface-oxidized InP 2022 Letters of the ZhTF, vol.48, 17, pp.6-8 DOI: http://dx.doi.org/10.21883/PJTF.2022.17.53278.19266