Ph.D., RSF project participant
Name: Rozhkov Alexander Vladimirovich / Рожков Александр Владимирович
Birth: January 28, 1955, in Tashkent, USSR (now Russia)
Occupancy: Scientific staff member of the Ioffe Physical-Technical Institute in Leningrad (St. Petersburg) since 1978
Research interests: Development and research of A3B5 ultrafast high-voltage pulsed devices
Education, degrees:
1978 – graduated from Leningrad State Electro-Technical University, Physico-Technical Faculty (under the auspices of the Ioffe Physico-Technical Institute), Leningrad, Russia.
Ms Degree, Electrical Engineer (with Honors, B-1 126453
Major: Optical and Electronic Devices.
1986 – PhD Degree (Candidate of Sciences, Diploma FM 026961).,
Major: Physical and Mathematical Sciences.
Professional activity:
- employed at the Ioffe Institute in the laboratory of optoelectronic phenomena in semiconductor heterostructures and now in the laboratory of semiconductor luminescence and injection emitters;
- his 42 years of experience are particularly concerned with novel approach to utilize the intrinsic radiative recombination to design fast pulse heterothyristors and sharpening diodes for a picosecond range. He has authorized or co-authorized more than 90 papers.
Some the last years publications:
1. Брылевский В.И., Смирнова И.А., Рожков А.В., Брунков П.Н., Родин П.Б., Грехов И.В. // Лавинное переключение пикосекундного диапазона высоковольтных диодов: Si-Si-GaAs-структуры // IEEE Trans. Plasma Sci., v. 44, no. 10, pp. 1941-1946 (2016), http://dx.doi.org/10.1109/TPS.2016.2561404.
2. Рожков А.В., Иванов М.С., Родин П.Б. // Эффект самоподдержания проводящего состояния в обратносмещенных GaAs-диодах, переключаемых в режиме задержанного лавинного пробоя. // Письма в ЖТФ, 2022, том 48, вып. 16 DOI: 10.21883/PJTF.2022.16.53203.19271
3. Иванов М.С., Рожков А.В., Родин П.Б. // Коллапсирующие домены Ганна как механизм самоподдержания проводящего состояния в обратносмещенных высоковольтных GaAs-диодах. // Письма в ЖТФ, 2022, том 48, вып. 20 DOI: 10.21883/PJTF.2022.20.53693.19326.
4. А. Rozhkov, M. Ivanov, P. Rodin // The lock-on effect and collapsing bipolar Gunn domains in high-voltage GaAs avalanche p-n-junctions diode. // Solid State Communications 354, 114895 (2022).