Technology of Molecular beam epitaxy of semiconducting, insulating and magnetic materials

Group participants: Alexeev E. A., Belyakova E. I., Kaveev A. K., Yusupova S. A.

Field of studies:

Functional nanomaterials and hybrid nanostructures for spintronics, including topological insulators, semiconductors and conventional insulators, magnetic materials. Interest in terahertz optics and photonics. Methods being used: molecular beam epitaxy, diffraction methods, ARPES, XMCD, AFM.

Main achievements:

Research in the field of synthesis of solid-state nanoheterostructures (oxide spintronics and physics of topological insulators) by laser molecular beam epitaxy and the study of their properties, both as a responsible executor and as a project manager. Carrying out work on growing nanostructures based on ferromagnetic metals and alloys, ferrite garnets and spinels (CoFeB/MgO, YIG/GaN, NiFe2O4/SrTiO3, LaAlO3/SrTiO3), as well as nanostructures based on ferromagnetic metals and alloys on substrates of topological insulators based on Bi-Te-Se. Characterization of these structures by RHEED, XRD, XMCD, XAS, AFM, MOKE, FMR and ARPES methods, including at synchrotron radiation stations.

As a result of this research:

  • Opening of the band gap at the Dirac point for the topological insulator BiSbTeSe2 by two-dimensional doping with cobalt or manganese
  • A spin-valve effect was found in PbSnTe TI with a deposited pair of ferromagnetic contacts with different coercive fields
  • Experiments were carried out on the growth and optimization of PbSnTe/Si(111) and PbSnTe/BaF2/CaF2/Si(111) heterostructures
  • Structurally ordered epitaxial films of ferromagnetic metals (Co, CoFeB, CoFe) were obtained on the surface of topological insulators (for example, Bi2Te3). The epitaxial relations, crystal structure, and magnetic properties of the grown objects were studied. The direction of magnetization in the grown layers is determined
  • It is shown that BiTeI(0001) layers during thermal annealing undergo a structural transformation with the formation of topological states. This shows the possibility of modifying the topological properties of systems with a strong Rashba splitting of the electronic structure by induced changes in the sequences of atomic planes
  • For the first time, structurally ordered CoFeB layers were obtained on the surface of MgO, which is extremely important for improving the quality of magnetic tunneling junctions in CoFeB/MgO/CoFeB systems used in MRAM. The behavior of the magnetization and FMR in these films was studied, a fourth-order magnetocrystalline anisotropy was revealed, and the FMR spectra were simulated. The CoFeB-MgO-Fe3O4 system was also studied, the nature of structural rearrangements in nanothick layers in this system with a change in the degree of iron oxidation was revealed
  • Structurally perfect layers of spinels were grown on MgO and STO substrates, the behavior of magnetization was studied, the presence of an ultra-narrow FMR line in NiFe2O4 nanolayers was revealed, the dependence of the lifetime of certain spectral lines on the sign of deformation of the MgO layer doped with chromium on GaN and sapphire substrates was revealed
  • Experiments on the growth of MgAl2O4:Cr spinel have been carried out, it has been shown that it is possible to obtain thin films of this spinel, the width of the PL lines close to bulk crystals, which indicates their high crystalline quality.
  • Metastable structural modifications in epitaxial MnF2 and ZnF2 films were stabilized and studied.

Cooperation:

  • HiSOR synchrotron radiation center, Hiroshima university, Japan
  • Rzhanov Institute of Semiconducting physics, Novosibirsk, Russia
  • Institute of Material strength physics, Tomsk, Russia
  • Saint-Petersburg Zh. Alferov Academic University, Saint-Petersburg, Russia

Some publications:

  1. Krichevtsov,BB; Suturin,SM; Korovin,AM; Kaveev,AK; Bursian,VE; Cunado,JL; Sokolov,NS «Diffused magnetic transitions in NiFe2O4/SrTiO3(001) epitaxial heterostructures». J. Magn. Magn. Mater., v.562, 2022, http://dx.doi.org/10.1016/j.jmmm.2022.169754
  2. Kaveev,АК; Tereshchenko,ОЕ «Dielectric buffer layer optimization for the production of low-defect epitaxial films of Pb(1-x)Sn(x)Te with x≥0.4 ». Fizika i technika poluprovodnikov, v.56, №7, 2022, P. 642 – 645 (in Russian)
  3. (Q1) Kaveev,AK; Suturin,SM; Golyashov,VA; Kokh,KA; Eremeev,SV; Estyunin,DA; Shikin,AM; Okotrub,AV; Lavrov,AN; Schwier,EF; Tereshchenko,OE «Band gap opening in the BiSbTeSe2 topological surface state induced by ferromagnetic surface reordering». Phys. Rev. Mater., v.5, 12, 2021, http://dx.doi.org/10.1103/PhysRevMaterials.5.124204
  4. Kaveev,AK; Bondarenko,DN; Tereshchenko,OE «The dependence of surface morphology on the growth temperature of the Pb0.7Sn0.3Te/Si(111) topological insulator thin films». J. Phys.: Conf. Ser., v.2103, 1, 2021 http://dx.doi.org/10.1088/1742-6596/2103/1/012086
  5. Kaveev,AK; Bondarenko,DN; Tereshchenko,OE «Structural Characterization of Pb0.7Sn0.3Te Crystalline Topological Insulator Thin Films Grown on Si(111)». Semiconductors, v.55, 8, 2021, с. 682 – 685 http://dx.doi.org/10.1134/S106378262108011X
  6. A K Kaveev, A N Terpitskiy, O E Tereshchenko, V A Golyashov, D A Estyunin, A M Shikin and E F Schwier, Change of the topological surface states induced by ferromagnetic metals deposited on BiSbTeSe2, J. Phys.: Conf. Ser., (2020), v.1697, 1, 012095, doi: http://dx.doi.org/10.1088/1742-6596/1697/1/012095
  7. Tarasov,AS; Golyashov,VA; Ishchenko,DV; Akhundov,IO; Klimov,AE; Epov,VS; Kaveev,AK; Suprun,SP; Sherstyakova,VN; Tereshchenko,OEб Field Effect and Spin-Valve Effect in the PbSnTe Topological Crystalline Insulator (2020), Optoelectronics, Instrumentation and Data Processing, v.56, 5 страницы: 553-557, DOI: http://dx.doi.org/10.3103/S8756699020050131
  8. Kaveev, A.K.; Golyashov, V.A; Klimov, A.E.; Schwier, E.F., Suturin, S.M.;Tarasov, A.S.; Tereshchenko, O.E.; Structure and magneto-electric properties of Co-based ferromagnetic films grown on the Pb0.71Sn0.29Te crystalline topological insulator, MATERIALS CHEMISTRY AND PHYSICS Vol: 240 Article Number: 122134 (2020) (http://dx.doi.org/10.1016/j.matchemphys.2019.122134)
  9. A. K. Kaveev, A. G. Banshchikov, A. N. Terpitskiy, V. A. Golyashov, O. E. Tereshchenko, K. A. Kokh, D. A. Estyunin, and A. M. Shikin, Energy-Gap Opening Near the Dirac Point after the Deposition of Cobalt on the (0001) Surface of the Topological Insulator BiSbTeSe2, Semiconductors, 2020, Vol. 54, No. 9, pp. 1051–1055
  10. Kaveev, A.K., Suturin, S.M., Golyashov, V.A., Kokh, K.A., Tereshchenko, O.E.; Structural transformation of the BiSbTeSe2 topological insulator during Co laser MBE deposition, Journal of Physics: Conference Series 1400(5), 055016 (2019) (http://dx.doi.org/10.1088/1742-6596/1400/5/055016)
  11. Kaveev, A. K.; Sokolov, N. S.; Suturin, S. M.; et al., Crystalline structure and magnetic properties of structurally ordered cobalt-iron alloys grown on Bi-containing topological insulators and systems with giant Rashba splitting, CRYSTENGCOMM Volume: 20 Issue: 24 Pages: 3419-3427 (2018) (http://dx.doi.org/10.1039/C8CE00326B)
  12. Feofilov, S. P.; Kulinkin, A. B.; Kaveev, A. K.; et al., Fluorescence spectroscopy of Cr3+ ions in MgO nanofilms on Al2O3 and GaN substrates, OPTICAL MATERIALS Volume: 83 Pages: 43-46 (2018) (http://dx.doi.org/10.1016/j.optmat.2018.05.059)
  13. (Q1) Suturin, S.; Kaveev, A.; Korovin, A.; et al., Structural transformations and interfacial iron reduction in heterostructures with epitaxial layers of 3d metals and ferrimagnetic oxides, JOURNAL OF APPLIED CRYSTALLOGRAPHY Volume: 51 Pages: 1069-1081 Part: 4 (2018) (https://doi.org/10.1107/S1600576718007823)
  14. (Q1) Fiedler, S.; Eremeev, S. V.; Golyashov, V. A.;Kaveev A. et al., Topological states induced by local structural modification of the polar BiTeI(0001) surface, NEW JOURNAL OF PHYSICS Volume: 20 Article Number: 063035 (2018) (http://dx.doi.org/10.1088/1367-2630/aac75e)
  15. (Q1) Kaveev, A. K.; Bursian, V. E.; Krichevtsov, B. B.; et al., Laser MBE-grown CoFeB epitaxial layers on MgO: Surface morphology, crystal structure, and magnetic properties, PHYSICAL REVIEW MATERIALS Volume: 2 Issue: 1 Article Number: 014411 (2018) (http://dx.doi.org/10.1103/PhysRevMaterials.2.014411)

Patents:

  1. Патент RU № 2511070 “Устройство визуализации терагерцового излучения”
  2. Патент RU № 2783365 “Слой топологического изолятора Pb1-xSnxTe:In на кристаллической подложке и способ его изготовления”
  3. Патент RU № 2660764 “Сенсор на основе поверхностно-плазмонного резонанса с элементом плоской оптики”
  4. Патент ЕПВ № 015000 “Способ нанесения полиэтилена на кремний и кремниевый оптический элемент с просветляющим покрытием из полиэтилена, нанесенным указанным способом”

Projects (supervision and participation):

  1. RFBR grant № 17-12-01508, “The formation and investigation of the interfacial electronic properties of the ferromagnetically ordered systems on topological insulators”, 2017 – 2019
  2. RSCF Grant № 17-12-01508, “New oxide nanosized heterostructures for microwave applications: growth process, crystal structure and magnetic properties”, 2017 – 2019.
  3. RFBR Grant № 18-02-00517, “Synthesis and spectroscopic studies of dielectric oxide structures”, 2018 – 2020
  4. Rus. Fed. Government Grant № 14.Z50.31.0021, “Hybrid SpinOptronics – functional possibilities of spin in the semiconducting nanostructures and semiconductor/metal hybrides: optical, microwave and electric control of spin”.2015-2017. Finished successfully.
  5. RFBR Grant № 16-02-00410, “Nanosized films and multilayered structures based on yttrium iron garnet Y_{3}Fe_{5}O_{12}”, 2017-2018
  6. RSCF Grant № 17-12-01047, “Spin-electronic structure of nonmagnetic semiconducting crystals and heterostructures with strong spin-orbit interaction as basis of new generation of materials and structures for spintronics”, 2017-2021
  7. RFBR Grant № 21-52-12024, “Growth, electronic structure and ultrafast electron dynamics of magnetic topological insulators”, 2021-2023
  8. RFBR Grant № 18-57-80006, “Electronic synapses based on 2D materials for neuromorphic computing”, 2018-2020

Awards:

  1. Gratitude of the President of the Russian Academy of Sciences (2016)
  2. Selected as the best scientific research in Ioffe Institute (2007)
  3. President of Russian Federation Personal Grant (2007)
  4. Several local grants during M.S. and Ph.D. curriculum (2001-2004)
  5. Selected as the best scientific master degree research (2001)
  6. M.S. diploma with honor (summa cum laude), St.Petersburg State Polytechnical University (2001)

Contacts:

A.K. Kaveevkaveev@mail.ioffe.ru+7 (921) 740-77-00
Last updated: December 2022