Vexler Mikhail Isaacovich

Dr.Sci, Prof. RAS, Principal researcher + Lab head

vexler@mail.ioffe.ru

Mikhail I. VEXLER (born 1969, graduated from the Physical-Technical Dept of the TU-SPb in 1994, joined the Ioffe Inst in 1990) – now principal researcher, Dr.-habil., laboratory head.

His own long-term research focus is simulation of tunnel currents in various MIS structures, in particular in those with the spatially fluctuating parameters. Presently he is especially engaged into a study on the electro-physical characteristics of MIS diodes and 2D transistors with thin calcium fluoride films. Research interests include also investigation of physical phenomena related to the hot carrier injection in Silicon devices, such as light emission and impact ionization.

As a Lab head he coordinates all the research directions represented in the Laboratory.

Curriculum vitae

Name: Mikhail Vexler / Михаил Исаакович Векслер

Born: 15 June 1969, Leningrad, USSR (now St.-Petersburg, Russia)

Education, degrees: 

  • Ioffe Physical-Technical Institute of the Russian Academy of Sciences Institute, St.-Petersburg: Habilitation in Phys.-Math. (2007), Ph.D. in Phys.-Math. (1996)
  • State Technical University, Department of Physics and Technology, St.-Petersburg: M.S. (1994, honors)
  • Secondary School No. 239, Leningrad (1986, silver medal)

Fields of interest:

  • Semiconductor devices (general) and related simulations
  • MISFET scaling, high-k dielectrics, hot carrier phenomena
  • Tunneling, low-dimensional systems, state quantization

Academic Honors:

  • Alexander von Humboldt Fellowship (1997-1999, 2003, 2007)
  • Honor certificate of the Russian academy of sciences (RAS) (2014)
  • Election to Professorship of the RAS (2016)
  • Gratitudes of the Presidents of the RAS (2016, 2020)

Professional activity:

Research (1990-present)

  • Ioffe Institute, Solid State Electronics Division, Laboratory of power semiconductor devices: principal researcher (главный научный сотрудник) (since 2023)
  • Ioffe Institute (leading researcher 2009, senior researcher 2002, researcher 1999, junior researcher 1994, senior laboratory assistant 1992, practice student 1990)

Service (2016-present)

  • Associate editor of the Microelectronics Engineering Journal, Elsevier (since 2022)
  • Editor of the Semiconductor (Физика и техника полупроводников) journal (since 2023)
  • Ioffe Institute, head of the laboratory of power semiconductor devices (since 2022; acting since Dec. 2019)
  • Member of the dissertation council 34.01.02 at the Ioffe Institute (since 2020)
  • Member of the attestation commission at the Ioffe Institute (since 2020)
  • Chair of the examination board [subjects: philosophy, foreign languages] and Vice-chair of the examination appeals board at the graduate school of the Ioffe Institute (since 2024)
  • Secretary of the working group in the community of RAS professors (since 2016)

Visiting (1997-2010, total ~ 5 years)

  • Univ. Kiel, Germany (1997-1999, total 2 years)
  • Univ. Bremen, Germany (2000-2001, 2003, total 1 y 1 m)
  • Univ. Braunschweig, Germany (2007-2010, total 1 y 10 m)

Teaching

  • State Technical Univ., St.-Petersburg (half-time, total 6.5 years: physics teacher 1994-1997, docent 2002-2006, docent title 2005; co-authorized 4 manuals) 
  • Ioffe Institute, supervised 2 defended PhD theses

Military experience: Soviet Air Force (soldier, 1987-1989, mass late-USSR student draft)

Languages: Russian, German, English

Main hobby: Classical music

Selected publications:

  1. Banshchikov A.G., Dvortsova P.A., Illarionov Yu.Yu., Ivanov I.A., Sokolov N.S., Suturin S.M., Vexler M.I., Yusupova Sh.A. Effect of fluoride layer thickness on the leakage current in Au/CaF2/Si(111) heterostructures. Thin Solid Films, v. 783, Paper No. 140058 5 pages (2023)
  2. Lyublinsky A.G., Kardo-Sysoev A.F., Cherenev M.N., Vexler M.I. Influence of DRSD operation cycle on the output pulse parameters. IEEE Trans. on Power Electronics, v. 37, No. 6, Paper Number: TPEL-Letter-2021-11-0472 4 pages
  3. Knobloch T., Illarionov Y.Y., Ducry F., Schleich C., Wachter S., Watanabe K., Taniguchi T., Mueller T., Waltl M., Lanza M., Vexler M.I., Luisier M., Grasser T. The performance limits of hexagonal boron nitride as an insulator for scaled CMOS devices based on two-dimensional materials. Nature Electronics, v. 4, pp. 98-108 (2021)
  4. Illarionov Yu.Yu., Knobloch T., Lanza M., Akinwande D., Vexler M.I., Mueller T., Lemme M., Fiori G., Schwierz F., Grasser T. Insulators for 2D nanoelectronics: the gap to bridge. Nature Communications, v. 11, Paper No. 3385 [15 pages] (2020)
  5. Illarionov Yu.Yu., Banshchikov A.G., Polyushkin D.K., Wachter S., Knobloch T., Thesberg M., Stoeger-Pollach M., Steiger-Thirsfeld A., Vexler M.I., Waltl M., Sokolov N.S., Mueller T., Grasser T., Ultrathin Calcium Fluoride Insulators for Two-Dimensional Field-Effect Transistors, Nature Electronics, v. 2, pp. 230-235 (2019)
  6. Sharma P., Tyaginov S., Makarov A., Grasser T., Vexler M.I., Rauch S.E., Franco J., Kaczer B., Hot-carrier degradation modeling of decananometer nMOSFETs using the drift-diffusion approach, IEEE Electron Device Letters, v. 38, № 2, pp. 160-163 (2017)
  7. Vexler M.I., Tyaginov S.E., Illarionov Y.Y., Fedorov V.V., Isakov D.V., Sing Y.K., Shenp A.D., A general simulation procedure for the electrical characteristics of metal-insulator-semiconductor tunnel structures, Semiconductors, v. 47, № 5, pp. 686-694 (2013)
  8. Schmidt P., Berndt R., Vexler M.I., Ultraviolet light emission from Si in a scanning tunneling microscope, Physical Review Letters, v. 99, № 24, Paper 246103 (2007)
  9. Vexler M.I., Tyaginov S.E., Shulekin A.F., Determination of the hole effective mass in thin silicon dioxide film by means of an analysis of characteristics of a MOS tunnel emitter transistor, Journal of Physics: Condensed Matter, v. 17, № 50, pp. 8057-8068 (2005)
  10. Vexler M.I., Shulekin A.F., Grekhov I.V., Dieker Ch., Zaporojtschenko V., Zimmermann H., Jäger W., Seegebrecht P., Current model considering oxide thickness non-uniformity in a MOS tunnel structure, Solid-State Electronics, v. 45. № 1. pp. 19-25 (2001)
  11. Grekhov I.V., Shulekin A.F., Vexler M.I., Silicon Auger transistor – new insight into the performance of a tunnel MIS emitter transistor, Solid-State Electronics, v. 38, № 8, pp. 1533-1542 (1995)