Vexler Mikhail Isaacovich

Dr.Sci, Prof. RAS, Leading researcher

Mikhail I. VEXLER (b. 1969, grad. Phys-Tech Dept TU-SPb in 1994, joined Ioffe Inst in 1990) – leading researcher, Dr.-habil., docent, laboratory head; dealing with the tunnel current simulations in various MIS structures. In the last time his main work focus is on the features of the behavior of MIS-systems in non-planar configurations and of the band-to-band electron transport. He also coordinates the study toward electro-physical characteristics of MIS-diodes with the thin calcium fluoride films. Research interests include also investigation of physical phenomena related to the hot carrier injection in silicon, such as impact ionization and light-emission.

Curriculum vitae

Name: Mikhail Vexler / Михаил Исаакович Векслер

Born: 15 June 1969, Leningrad, USSR (now St.-Petersburg, Russia)

Education, degrees: 

  • Ioffe Physical-Technical Institute of the Russian Academy of Sciences Institute, St.-Petersburg: Habilitation in Phys.-Math. (2007), Ph.D. in Phys.-Math. (1996)
  • State Technical University, Department of Physics and Technology, St.-Petersburg: M.S. (1994, honors)
  • Secondary School No. 239, Leningrad (1986, silver medal)

Fields of interest:

  • Semiconductor devices (general) and related simulations
  • MISFET scaling, high-k dielectrics, hot carrier phenomena
  • Tunneling, low-dimensional systems, state quantization

Academic Honors:

  • Alexander von Humboldt Fellowship (1997-1999, 2003, 2007)
  • Honor certificate of the Russian academy of sciences (RAS) (2014)
  • Election to Professorship of the RAS (2016)
  • Gratitudes of the Presidents of the RAS (2016, 2020)

Professional activity:

Research (1990-present)

  • Ioffe Institute, Solid State Electronics Division, Laboratory of power semiconductor devices: leading researcher (ведущий научный сотрудник) (since 2009)
  • Ioffe Institute (senior researcher 2002, researcher 1999, junior researcher 1994, senior laboratory assistant 1992, practice student 1990)

Service (2016-present)

  • Ioffe Institute, acting head of the laboratory of power semiconductor devices (appointed since Dec. 2019)
  • Member of the dissertation council 34.01.02 at the Ioffe Institute (since 2020)
  • Member of the attestation commission at the Ioffe Institute (since 2020)
  • Vice-chair of the examination board in graduate school of the Ioffe Institute (since 2021)
  • Secretary of the working group in the community of RAS professors (since 2016)

Visiting (1997-2010, total ~ 5 years)

  • Univ. Kiel, Germany (1997-1999, total 2 years)
  • Univ. Bremen, Germany (2000-2001, 2003, total 1 y 1 m)
  • Univ. Braunschweig, Germany (2007-2010, total 1 y 10 m)


  • State Technical Univ., St.-Petersburg (half-time, total 6.5 years: physics teacher 1994-1997, docent 2002-2006, docent title 2005; co-authorized 4 manuals) 
  • Ioffe Institute, supervised 2 defended PhD theses

Military experience: Soviet Air Force (soldier, 1987-1989, mass late-USSR student draft)

Languages: Russian, German, English

Main hobby: Classical music

Selected publications:

  1. Illarionov Yu.Yu., Banshchikov A.G., Polyushkin D.K., Wachter S., Knobloch T., Thesberg M., Stoeger-Pollach M., Steiger-Thirsfeld A., Vexler M.I., Waltl M., Sokolov N.S., Mueller T., Grasser T., Ultrathin Calcium Fluoride Insulators for Two-Dimensional Field-Effect Transistors, Nature Electronics, v. 2, pp. 230-235 (2019)
  2. Sharma P., Tyaginov S., Makarov A., Grasser T., Vexler M.I., Rauch S.E., Franco J., Kaczer B., Hot-carrier degradation modeling of decananometer nMOSFETs using the drift-diffusion approach, IEEE Electron Device Letters, v. 38, № 2, pp. 160-163 (2017)
  3. Vexler M.I., Tyaginov S.E., Illarionov Y.Y., Fedorov V.V., Isakov D.V., Sing Y.K., Shenp A.D., A general simulation procedure for the electrical characteristics of metal-insulator-semiconductor tunnel structures, Semiconductors, v. 47, № 5, pp. 686-694 (2013)
  4. Schmidt P., Berndt R., Vexler M.I., Ultraviolet light emission from Si in a scanning tunneling microscope, Physical Review Letters, v. 99, № 24, Paper 246103 (2007)
  5. Vexler M.I., Tyaginov S.E., Shulekin A.F., Determination of the hole effective mass in thin silicon dioxide film by means of an analysis of characteristics of a MOS tunnel emitter transistor, Journal of Physics: Condensed Matter, v. 17, № 50, pp. 8057-8068 (2005)
  6. Vexler M.I., Shulekin A.F., Grekhov I.V., Dieker Ch., Zaporojtschenko V., Zimmermann H., Jäger W., Seegebrecht P., Current model considering oxide thickness non-uniformity in a MOS tunnel structure, Solid-State Electronics, v. 45. № 1. pp. 19-25 (2001)
  7. Grekhov I.V., Shulekin A.F., Vexler M.I., Silicon Auger transistor – new insight into the performance of a tunnel MIS emitter transistor, Solid-State Electronics, v. 38, № 8, pp. 1533-1542 (1995)