Astrova Ekaterina Vladimirovna

Ph.D., Senior researcher, team leader in the laboratory of power semiconductor devices (head of the laboratory M. Vexler)

east@mail.ioffe.ru

Web of Science Researcher ID:  G-3122-2014

Science metric information and most cited publications see on site: https://publons.com/researcher/2525160/ekaterina-ev-astrova/

Or on the Institute site – publication list since 2000

Curriculum vitae

Name: Ekaterina Astrova / Екатерина Владимировна Астрова

Born: 07.12.1948, Nikolaev, USSR

Education, degrees: 

  • Odessa Polytechnical Institute 1966-1971,
  • postgraduate education: course for engineers in Electro-technical Institute (LETI) 1976, Leningrad,
  • postgraduate education: course for engineers in Moscow Electronics Institute 1979, Zelenograd,
  • post-graduate student at the Ioffe Institute 1980-1983,
  • Ph.D. (physical -mathematical sciences) 1986  (Ioffe Institute)

Experience:

  • firm«Positron» 1971-1978,
  • firm «Vector» 1978-1980,
  • Ioffe Physical-Technical Institute since 1980

Fields of interest:

  • Technology of silicon devices and integrated circuits
  • Capacitance transient spectroscopy of deep level states in silicon
  • Porous silicon
  • Fuel cells
  • Photonic crystals
  • Silicon anodes for Li-ion batteries

Academic Honors:

  • Prize winner of the Ioffe Institute competition for the best work 2005
  • Member of the Program Committee of International Conference “Semiconductor Science and Technology”

Projects:

European grants: INTAS, FP7;

Russian grants: RFBR

Visiting researcher

  • Chemnitz Technical Univ., Germany, 1995
  • Trinity College, Dublin, Ireland  (2002, 2004, 2007)

Teaching

  • Electro-technical  University (LETI), St.-Petersburg, 2006-2011 
  • Ioffe Institute, supervised 2 defended PhD theses (2007 and 2013)