Brylevskiy Victor Ivanovich

PhD, leading engineer + researcher

vbrylevskiy@mail.ru

Name: Brylevskiy Victor Ivanovich / Брылевский Виктор Иванович

Birth: October 2, 1949, in Moscow, USSR (now Russia)

Occupancy: Scientific staff member of the Ioffe Physical-Technical Institute in Leningrad (St. Petersburg) since 1974

Research interests: Ultrafast high-voltage power semiconductor devices, ultra-wideband pulse electrodynamics

Education, degrees:

1976 – graduated from Leningrad Polytechnical Institute named after M.I. Kalinin, as engineer for electronic technique, special area: “semiconductors and dielectrics”;

1987 – candidate of physical-mathematical sciences (equiv. PhD) , specialty: 01.04.10 “Physics of semiconductors and dielectrics”.

Professional activity:

  • employed  at the Ioffe Institute in the Laboratory of power semiconductor devices (earlier  also in the laboratory of fast processes in semiconductors);
  • started the career as a testing laboratory assistant (1974), later occupied the positions of a junior, ordinary, senior researcher; now is a leading engineer and researcher;
  • involved in a study toward physical processes in the fast high-voltage pulsed semiconductor devices (such as thyristor modulators, drift step recovery didoes and pulse sharpening diodes for a picosecond  range), design engineering and fabrication of generators of short high-voltage pulses using these devices.

Some publications:

  1. Брылевский В.И., Кардо-Сысоев А.Ф., Леликов Ю.С., Смирнова И.А., Чашников И.Г., Караваев В.В. // Быстродействующие тиристоры // IEEE 0-7803-4214-3 / 97 1997 (Балтимор, MD, 11-я Международная конференция по импульсной энергии IEEE).
  2. Брылевский В.И., Ефанов В.М., Кардо-Сысоев А.Ф., Смирнова И.А., Чашников И.Г. // Тиристор с быстрым модулятором // IEEE 0-7803-3076-53 / 96 1996 (Бока-Ратон, Флорида, Международный симпозиум по силовым модуляторам и семинар по высоковольтному оборудованию).
  3. Брылевский В.И., Смирнова И.А., Рожков А.В., Брунков П.Н., Родин П.Б., Грехов И.В. // Лавинное переключение пикосекундного диапазона высоковольтных диодов: Si-Si-GaAs-структуры // IEEE Trans. Plasma Sci., v. 44, no. 10, pp. 1941-1946 (2016), http://dx.doi.org/10.1109/TPS.2016.2561404.
  4. Brylevskiy V.I., Smirnova I.A., Podolska N.I., Zharova Y.A., Rodin P.B., Grekhov I.V. // Picosecond-range avalanche switching of bulk semiconductors triggered by steep high-voltage pulses // IEEE Trans. Plasma Sci., v. 47, no 1, pp. 994-999 (2019).
  5. Brylevskiy V., Podolska N., Smirnova I., Rodin P., Grekhov I. // Picosecond-range avalanche switching initiated by a steep high-voltage pulse: Si bulk samples versus layered pn-junction structures // Physica Status Solidi (B): Basic Solid State Physics, v. 256, no. 6, 1800520 (2019).
  6. Brylevskiy V., Smirnova I., Podolska N., Zharova Y., Rodin P., Grekhov I. // High-voltage picosecond-range avalanche switching of semiconductor structures without pn-junctions // In: IEEE International Pulsed Power Conference 21 (21st Intl. Conf. on Pulsed Power, PPC 2017), 2018,  8291198.
  7. Брылевский В.И., Смирнова И.А., Подольская Н.И., Жарова Ю.А., Родин П.Б., Грехов И.В. // Экспериментальное наблюдение задержанного ударно-ионизационного пробоя полупроводниковых структур без p-n-переходов // Письма в Журнал технической физики, т. 44, № 4, с. 66-73 (2018).