Delimova Lyubov Alexandrovna

Dr.Sci., Senior Researcher

email: ladel@mail.ioffe.ru

Lyuba A. Delimova

Lyuba A. Delimova received Ph.D and Dr.Sc. in physics from Ioffe Physicotechnical Institute in 1982 and 2013, respectively. Since 1972, she has been working at the Division of Solid State Electronics, Ioffe Institute of the Russian Academy of Sciences. The main interest is thin-film ferroelectric heterostructures for applications in micro- and nanoelectronics.

Web of Science Researcher ID: E-5652-2010 https://publons.com/researcher/E-5652-2010/

Curriculum vitae

Name: Lyuba Delimova / Любовь Александровна Делимова

Education, degrees: 

  • Saint-Petersburg Electrotekhnical University (LETI), 1966-1972, Education
  • MS degree in the field of semiconductor devices, 1972, LETI 
  • PhD (physical-mathematical sciences), 1982, Ioffe Institute of the RAS
  • Dr. Sci. (physical-mathematical sciences), 2013, Ioffe Institute of the RAS

Fields of interest:

  • Thin-film ferroelectric heterostructures, charge carrier transport
  • Nonvolatile Ferroelectric Random Access Memory (FeRAM)
  • Ferroelectric field-effect transistor based on PZT
  • High-temperature superconductivity (HTSC)
  • Semiconductor devices, charge carrier transport

Academic Honors:

  • Prize of the 12th Russian/CIS/Baltic/Japan Symposium on Ferroelectricity (RCBJSF) for the report “Electrophysical properties of integrated ferroelectric capacitors based on sol-gel PZT films”, 2014.
  • Prize-winner of Solid-State Electronics Division competition for the study “Semiconductor photocell, operated by polarization charge”, 2008.
  • Prize-winner of Solid-State Electronics Division competition for the study “Method for determination of trap charge density at interfaces of thin-film M/F/M structures”, 2006.
  • Honorary Diploma of XIII Ural International Winter School on the Physics of Semiconductors for the report “HTSC YBCO ultrathin films”, 1999.
  • Prize-winner of Ioffe Institute competition for the study “A new principle of ultrathin HTSC YBCO film fabrication”, 1997.

Projects:

LD has participated in the projects financed by the Russian Academy of Sciences and Ministry of Science and Education. The ongoing projects:

  • RFBR 19-02-00148, leader
  • RFBR mk 19-29-03058, executor

Scientific Cooperation

  • Development Project for Samsung Advanced Institute of Technology and Samsung Electronics Co., Ltd., (Korea), 2003-2005
  • guest scientist Turku State University, Wihury Physical Laboratory, Finland, 1999-2001 
  • guest scientist University of Oslo, Department of Physics, Norway, 1995

Selected publications:

  1. L. Delimova, D. Seregin, G. Orlov, N. Zaitseva, E. Gushchina, A. Sigov, K. Vorotilov. “Porous PZT Films: How Can We Tune Electrical Properties?”, Materials 16, 5171 (2023). https://doi.org/10.3390/ma16145171
  2. Л.А. Делимова, Н.В. Зайцева, В.В. Ратников, В.С. Юферев, Д.С. Серегин, К.А. Воротилов, А.С. Сигов. «Сравнение характеристик тонких пленок PZT на подложках из сапфира и кремния» ФТТ 63, 1076-1083 (2021).  Physics of the Solid State, 63, 1224-1231 (2021).
  3. E.V. Gushchina, N.V. Zaitseva, L.A. Delimova, G.A. Orlov, D.S. Seregin, K.A. Vorotilov. “Atomic force microscopy of porous ferroelectric PZT films” J. Phys.: Conf. Ser. 1697, 012090 (2020).  DOI:10.1088/1742-6596/1697/1/012090
  4. E.V. Gushchina, N.V. Zaitseva, L.A. Delimova, D.S. Seregin and K.A. Vorotilov. “Conductive AFM study of the local current in thin ferroelectric sol-gel PZT films” J. Phys.: Conf. Ser. 1400, 077002 (2019). doi:10.1088/1742-6596/1400/7/077002
  5. L.A. Delimova, V.S. Yuferev, “Transient carrier transport and rearrangement of Schottky barrier layers under the action of a bias applied to the M/PZT/M structure”, J. Appl. Phys. 124, 184102 (2018). doi: http://dx.doi.org/10.1063/1.5052613
  6. L.A. Delimova, E.V. Guschina, D.S. Seregin, K.A. Vorotilov, A.S. Sigov, “Unexpected behavior of transient current in thin PZT films caused by grain-boundary conduction.” J. of Appl. Phys. 121, 224104 (2017). http://dx.doi.org/10.1063/1.4985177
  7. L.A. Delimova ,  E.V. Guschina, N.V. Zaitseva, S.I. Pavlov, D.S. Seregin, K.A. Vorotilov, A.S. Sigov, “Effect of seed layer with low lead content on electrical properties of PZT thin films”. J. Mater. Res. 32, 1618 (2017). DOI:10.1557/jmr.2017.156  
  8. L.A. Delimova, V.S. Yuferev, I.V. Grekhov, “High retention of the polarization in polycrystalline M/PZT/M capacitors in the presence of the depolarization field near grain boundaries”. IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control 58, 2252 (2011).
  9. L.A. Delimova, V.S. Yuferev, “High retention of the polarization and the depolarization field in polycrystalline M/PZT/M capacitors”. JAP 108, 084110 (2010). https://doi.org/10.1063/1.3499645
  10. L.A. Delimova, V.S. Yuferev, I.V. Grekhov, P.V. Afanasjev, G.P. Kramar, A.A. Petrov, V.P. Afanasjev, “Origin of photoresponse in heterophase ferroelectric Pt/Pb(Zr,Ti)O3/Ir capacitors”, Appl. Phys. Lett. 91, 112905 (2007). DOI: 10.1063/1.2773936
  11. L.A. Delimova, I.V. Grekhov, D.V. Mashovets, S. Tyaginov, S. Shin, J-M Koo, S-P Kim, Y. Park, “Transient-current measurement of the trap charge density at interfacesof a thin-film metal/ferroelectric/metal structure”, Appl. Phys. Lett. 87, 192101 (2005).
  12. I.V. Grekhov, L.A. Delimova, I.A. Liniichuk, D.V. Mashovets, I.A. Veselovsky “Strongly modulated conductivity in Ag/PLZT/LSCO field-effect transistor” Integrated Ferroelectrics 43, 101 (2002). https://dx.doi.org/10.1080/10584580212361https://doi.org/10.1063/1.2125122
  13. I. Grekhov, L. Delimova, I. Liniichuk, I. Veselovsky,  I. Titkov, M. Dunaevsky, V. Sakharov, “Growth mode study of ultrathin HTSC YBCO films on YBaCuNbO buffer”, Physica C 324, 39 (1999). https://doi.org/10.1016/S0921-4534(99)00423-2
  14. I. Grekhov, M. Baidakova, V. Borevich, V. Davidov, L. Delimova, I. Liniichuk, A. Lyublinsky, “A new buffer layer for high-quality HTSC ultrathin fabrication”, Physica C 276, 18 (1997). https://doi.org/10.1016/S0921-4534(96)00704-6