Illarionov Yury Yuryevich

Ph.D., senior researcher (acting)

ill-88@mail.ru

Mr. [now Dr.] Yury Illarionov started his scientific career at the Ioffe Institute in 2007 as an internship student. He is currently working on the Habilitation thesis under consulting of Prof. Vexler. During the last years he had been many times invited to the Institute for Microelectronics (TU Wien, Austria) as a postdoc guest researcher. Since April 2023 Dr. Illarionov is based in the Southern University of Science and Technology (Shenzhen, China) where he is working as a foreign faculty member and group leader.

His scientific interests are focused on reliability of 2D FETs and scaling of these devices. Recent achievements of Dr. Illarionov include demonstration of MoS2 FETs with record-thin 2nm crystalline CaF2 insulators. He has contributed to more than 80 research works, including papers in Nature Electronics, ACS Nano and Nature Communications among others. He also served as a committee member at IEEE IRPS 2020 and as a reviewer in numerous journals, including Nature, Nature Electronics, Nature Communications, Advanced Functional Materials and 2D Materials. Dr. Illarionov is a senior member of the IEEE (2020).

Curriculum vitae

Name: Yury Yuryevich Illarionov (Юрий Юрьевич Илларионов)

Born: 5 June 1988, Leningrad (now St-Petersburg), USSR

Education, degrees: 

2015Dr. tech., Technical Sciences,
 Technical University of Vienna (TU Wien), Vienna, Austria
2015 Ph.D., Physical and Mathematical Sciences (Semiconductor Physics)
 Ioffe Physical-Technical Institute, St-Petersburg, Russia
2012Double European M.Sc., Advanced Material Science
 Erasmus Mundus FAME Master Program
 Grenoble INP, France (2010-2011) and University of Augsburg, Germany (2011-2012)
2011M.Sc., Engineering and Technology (Technical Physics) [with Honors]
 St-Petersburg State Polytechnical University (Faculty of Physics and Technologies, Department of Solid State Physics)
2009B.Sc., Engineering and Technology (Technical Physics) [with Honors]
 St-Petersburg State Polytechnical University (Faculty of Physics and Technologies, Department of Solid State Physics)

Research visits and short-term appointments

Feb. 2018Research visit (invited by Prof. Eric Pop), Stanford University, California, USA
Sep. 2017Research visit (invited by Prof. Mario Lanza), Soochow University, Suzhou, China
Feb. 2012 – Jul. 2012Master student with employment, diploma internship, Singapore Institute of Manufacturing Technology (SIMTech), Singapore
May 2011 – Jul. 2011Master student with employment, summer internship, Institute of Researches on Catalysis and Environment in Lyon (IRCELYON), Lyon, France

Professional activities

2019Evaluator of best paper award: IEEE IPFA conference
2016 – 2020Reviewer for the following journals: ACS Applied Materials and Interfaces (2019,2020), Journal of Applied Physics (2019), Nanotechnology (2019), IEEE Journal of the Electron Devices Society (2018,2019), Advanced Functional Materials (2018), RSC Advances (2018), ACS Applied Materials & Interfaces (2018,2019), IEEE Access (2018), IEEE Transactions on Electron Devices (2018,2020), IEEE Electron Device Letters (2017-2018), Nature Communications (2017,2018), Scientific Reports (2017), Current Nanomaterials (2016)
2018Reviewer for the following grant proposals: Foundation for Polish Science (Poland)

Awards

2019Certificate of Appointment for the invited talk at the 26th IEEE International onference on the Physical and Failure Analysis of Integrated Circuits (IPFA), Hangzhou, China
2019Best poster award at the 4th International Conference on Physics of 2D Crystals (ICP2DC4), Hangzhou, China
2018Certificate of Recognition from American Chemical Society (ACS) for reviewing activity
2011Master diploma “with Honors”, St-Petersburg State Polytechnical University
2010Erasmus Mundus scholarship award by the European Commission
2009Bachelor diploma “with Honors”, St-Petersburg State Polytechnical University
2009Diploma award at the “XI All-Russian Youth Conference on Physics of Semiconductors and Nanostructures, Semiconductor Opto- and Nanoelectronics”
2009Special award for “The best scientific work” at the XXXVIII International Scientific and Practical Conference “Week of Science in St-Petersburg State Polytechnical University”
2005High school certificate “with honors” and gold medal award “for outstanding academic achievements” (given by the Russian Ministry of Education)

Selected publications

  1. Illarionov Yu.Yu., Knobloch T., Lanza M., Akinwande D., Vexler  M.I., Mueller T., Lemme M., Fiori G., Schwierz F., Grasser T.,  “Insulators for 2D Nanoelectronics: the Gap to Bridge”, Nature  Communications, 11, 3385 (2020).
  2. Wen C., Banshchikov A.G., Illarionov Yu.Yu., Frammelsberger W.,  Knobloch T., Hui F., Sokolov N.S., Grasser T., Lanza M., “Dielectric  Properties of Ultra-Thin CaF2 Ionic Crystals”, Advanced Materials,  2002525 (2020).
  3. Jing X., Illarionov Yu.Yu., Yalon E., Zhou P., Grasser T., Shi Y., Lanza M., “Engineering Field-Effect Transistors with Two-Dimensional Semiconducting Channels: Status and Prospects”, Advanced Functional Materials, 1901971, 2019 [Invited].
  4. Illarionov Yu.Yu., Banshchikov A.G., Polyushkin D.K., Wachter S., Knobloch T., Thesberg M., Vexler M.I., Waltl M., Lanza M., Sokolov N.S., Mueller T., Grasser T., “Reliability of Scalable MoS2 FETs with 2nm Crystalline CaF2 Insulators”, 2D Materials, v.6, p. 045004, 2019.
  5. Illarionov Yu.Yu., Banshchikov A.G., Polyushkin D.K., Wachter S., Knobloch T., Thesberg M., Stoeger-Pollach M., Steiger-Thirsfeld A., Vexler M.I., Waltl M., Sokolov N.S., Mueller T., Grasser T., “Ultrathin Calcium Fluoride Insulators for Two-Dimensional Field-Effect Transistors”, Nature Electronics, v. 2, pp. 230-235, 2019.
  6. Stampfer B., Zhang F., Illarionov Yu.Yu., Knobloch T., Peng W., Waltl M., Grill A., Appenzeller J., Grasser T., “Characterization of Single Defects in Ultra-Scaled MoS2 Field-Effect Transistors”, ACS Nano, v. 12, No. 6, pp. 5368–5375, 2018.
  7.  Illarionov Yu.Yu., Knobloch T., Waltl M., Rzepa G., Pospischil A., Polyushkin D.K., Furchi M.M., Mueller T., Grasser T., “Energetic Mapping of Oxide Traps in MoS2 Field-Effect Transistors”, 2D Materials, v.4, No. 2, 025108, 2017.
  8. Illarionov Yu.Yu., Waltl M., Rzepa G., Knobloch T., Kim J.-S., Akinwande D., Grasser T., “Highly-Stable Black Phosphorus Field-Effect Transistors with Low Density of Oxide Traps”, npj 2D Materials and Applications, v.1,  23, 2017.
  9.  Illarionov Yu.Yu., Smithe K.K.H., Waltl M., Knobloch T., Pop E., Grasser T., “Improved Hysteresis and Reliability of MoS2 Transistors with High-Quality CVD Growth and Al2O3 Encapsulation”, IEEE Electron Device Letters, v. 38, No. 12, pp. 1763-1766, 2017.
  10.  Illarionov Yu.Yu., Waltl M., Rzepa G., Kim J.-S., Kim S., Dodabalapur A., Akinwande D., Grasser T., “Long-Term Stability and Reliability of Black Phosphorus Field-Effect Transistors”, ACS Nano, v. 10, No. 10, pp. 9543–9549, 2016. 
  11. Illarionov Yu.Yu., Rzepa G., Waltl M., Knobloch T., Grill A., Furchi M.M., Mueller T., Grasser T., “The Role of Charge Trapping in MoS2/SiO2 and MoS2/hBN Field-Effect Transistors”, 2D Materials, v. 3, No. 3, 035004, 2016. 
  12. Jing X., Panholzer E., Song X., Grustan-Gutierrez E., Hui F., Shi Y., Benstetter G., Illarionov Yu.Yu., Grasser T., Lanza M., “Fabrication of Scalable and Ultra Low Power Photodetectors with High Light/Dark Current Ratios Using Polycrystalline Monolayer MoS2 Sheets“, Nano Energy, v.30, pp. 494–502, 2016.  
  13. Illarionov Yu.Yu., Smith A.D., Vaziri S., Ostling M., Mueller T., Lemme M.C., Grasser T., “Hot Carrier Degradation and Bias-Temperature Instability in Single-Layer Graphene Field-Effect Transistors: Similarities and Differences”, IEEE Transactions on Electron Devices, v. 62, No. 11, pp. 3876–3881, 2015. 
  14. Illarionov Yu.Yu., Bina M., Tyaginov S., Rott K., Kaczer B., Reisinger H., Grasser T., “Extraction of the Lateral Position of Border Traps in Nanoscale MOSFETs”, IEEE Transactions on Electron Devices, v. 62, No. 9, pp. 2730–2737, 2015. 
  15. Illarionov Yu.Yu., Smith A., Vaziri S., Ostling M., Mueller T., Lemme M., Grasser T., “Bias-Temperature Instability in Single-Layer Graphene Field-Effect Transistors”, Applied Physics Letters, v. 105, No. 14, 143507, 2014.   
  16. Illarionov Yu.Yu., Vexler M.I., Fedorov V.V., Suturin S.M., Sokolov N.S., “Electrical and Optical Characterization of Au/CaF2/p-Si(111) Tunnel-Injection Diodes”, Journal of Applied Physics, v. 115, 223706, 2014. 
  17. Illarionov Yu.Yu., Vexler M.I., Suturin S.M., Fedorov V.V., Sokolov N.S., Tsutsui K., Takahashi K., “Electron Tunneling in MIS Capacitors with the MBE-Grown Fluoride Layers on Si(111) and Ge(111): Role of Transverse Momentum Conservation”, Microelectronics Engineering (Open special issue “INFOS 2011”), v. 88, No. 7, pp. 1291-1294, 2011.