Samsonova Tatyana Pavlovna

junior researcher

tpsam@mail.ioffe.ru

Born: April 17, 1955

Education: Leningrad Electro-Technical Institute (1988)

Work experience:

Ioffe Physical-Technical Institute – since 1974

Research fields:

Post-growth technologies of GaAs-, GaP-, SiC-, GaN-based semiconductor devices and structures:

  • Deposition of thin metal and insulator films by i) thermal evaporation, ii) DC and RF ion-beam sputtering;
  • High-temperature thermal processes to anneal ion-implanted layers, to form low-resistance ohmic contacts and stable Schottky barriers;
  • Thermal oxidation of SiC;
  • Deposition of ultra-thin, high-resistance metal films with nano-size islet structure;
  • Dry etching processes: reactive-ion etching, ion-beam etching, plasma etching.

Publications in peer-reviewed scientific journals:

46 since 2001

Selected publications:

  1. Ivanov P.A., Grekhov I.V., Konstantinov A.O., Samsonova T.P. Reverse Current Recovery in 4H-SiC Diodes with n- and p-Base. – Proc. of the 4rd European Conference on Silicon Carbide and Related Materials – 2002, Lincoping, Sweden, Sept. 2 – 5, 2002 (Materials Science Forum, vol. 433 – 436, Trans. Tech. Publ., 2003), pp. 855 – 858.
  2. Grekhov I.V., Ivanov P.A., Khristyuk D.V., Konstantinov A.O., Korotkov S.V., and Samsonova T.P. Sub-nanosecond semiconductor opening switches based on 4H-SiC p+pon+-diodes. Solid-State Electronics, v.47, N10, p.1769-1774 (2003).
  3. Kozlovski V.V., Lomasov V.N., Rumyantsev D.S., Grekhov I.V., Ivanov P.A., Samsonova T.P., Helava H.I., Ragle L.O. Ion-beam mixing at Ni/n-6H-SiC interface under irradiation by H+-ions. – Nuclear Instruments and Methods in Physics Research – Section B, v.215, N 3-4, p.385-388 (2004).
  4. Grekhov I.V., Ivanov P.A., Rodin P.B., Samsonova T.P. Reverse breakdown tests of high voltage (1-kV Rated) 4H-SiC junction diodes made from commercial epitaxial material. – Abstracts of the AMEREM2006 Meeting, Albuquerque, NM, July 9 – 14,  p. 67 (2005).
  5. Ivanov P.A., Potapov A.S., Samsonova T.P. Analysis of forward current-voltage characteristics of non-ideal Ti / 4H-SiC Schottky barriers. – Proc. of the European Conf. on Silicon Carbide and Related Materials – 2008, Barcelona, Spain, September 7 – 11. Materials Science Forum Vols. 615 – 617 (2009), pp. 431 – 434.
  6. Ivanov P., Korolkov O., Samsonova T., Sleptsuk N., Potapov A., Toompuu J., Rang T. DLTS measurements on 4H-SiC JBS-diodes with boron implanted local p-n-junctions. – Proc. of the European Conf. on Silicon Carbide and Related Materials – 2010, Oslo, Norway, August 29 – September 2, Materials Science Forum Vols. 679 – 680 (2011), pp. 409 – 412.
  7. P.A. Ivanov, I.V. Grekhov, A.S. Potapov, N.D. Il’inskaya,O.I. Kon’kov, T.P. Samsonova. Reverse Leakage Currents in High-Voltage 4H-SiC Schottky Diodes. – Proc. of the European Conf. on Silicon Carbide and Related Materials – 2012, Saint-Petersburg, Russia, September 2 – 6, Materials Science Forum Vols. 740 – 742 (2013), pp. 877 – 880.
  8. P.A. Ivanov, O.I. Kon’kov, T.P. Samsonova, A.S. Potapov and I.V. Grekhov. Electrical Performance of 4H-SiC Based Drift Step Recovery Diodes. – Proc. of the International Conf. on Silicon Carbide and Related Materials – 2015, Giardini Naxos, Italy, October 4 – 9, Materials Science Forum Vols. 858 (2016), pp. 761 – 764.
  9. P.A. Ivanov, A.S. Potapov, T.P. Samsonova, I.V. Grekhov. Electric-field dependence of electron drift velocity in 4H–SiC. Solid-State Electronics, 2016, vol. 123, pp. 15 – 18.
  10. Ivanov,PA; Potapov,AS; Samsonova,TP; Grekhov,IV. Current-voltage characteristics of high-voltage 4H-SiC (p+)-(n0)-(n+) diodes in the avalanche breakdown mode. 2017, Semiconductors, v.51, 3, стр.: 374-378.
  11. Ivanov,PA; Potapov,AS; Kudoyarov,MF; Samsonova,TP. Effect of Low-Dose Proton Irradiation on the Electrical Characteristics of 4H-SiC Junction Diodes. 2018, Semiconductors, v.52, 10, стр.: 1307-1310.
  12. Ivanov,PA; Kudoyarov,MF; Potapov,AS; Samsonova,TP. Correction of the Reverse Recovery Characteristics of High-Voltage 4H-SiC Junction Diodes Using Proton Irradiation. 2019, Semiconductors, v.53, 6, стр.: 850-85.
  13. Il`inskaya,ND; Lebedeva,NM; Zadiranov,YM; Ivanov,PA; Samsonova,TP; Kon`kov,OI; Potapov,AS. Micro-profiling of 4H-SiC by Dry Etching to Form a Schottky Barrier Diode 2020, Semiconductors, v.54, 1, стр.: 144-149.