The most cited publications of the laboratory

Herein, the publications cited at least 30 times (according to the Russian scientific citation index) are included, which are co-authorized by at least one actual employee of the Laboratory and rely on the results obtained in the Laboratory. Total there are 43 such publications, as of July 2020.

Dated from 2011 up no now

  • LONG-TERM STABILITY AND RELIABILITY OF BLACK PHOSPHORUS FIELD-EFFECT TRANSISTORS Illarionov Y.Y., Waltl M., Rzepa G., Grasser T., Kim J.-S., Kim S., Dodabalapur A., Akinwande D. ACS Nano. 2016. Т. 10. № 10. С. 9543-9549.      
  • THE ROLE OF CHARGE TRAPPING IN MOS2/SIO2 AND MOS2/HBN FIELD-EFFECT TRANSISTORS Illarionov Y.Y., Rzepa G., Waltl M., Knobloch T., Grill A., Grasser T., Furchi M.M., Mueller T. 2D Materials. 2016. Т. 3. № 3. С. 035004.   
  • OPTIMIZATION OF A SCALABLE PHOTOCHEMICAL REACTOR FOR REACTIONS WITH SINGLET OXYGEN Loponov K.N., Lopes J., Lapkin A.A., Barlog M., Astrova E.V., Malkov A.V. Organic Process Research and Development. 2014. Т. 18. № 11. С. 1443-1454.
  • PREDICTIVE HOT-CARRIER MODELING OF N-CHANNEL MOSFETS Bina M., Tyaginov S., Rupp K., Wimmer Y., Osintsev D., Grasser T., Franco J., Kaczer B. IEEE Transactions on Electron Devices. 2014. Т. 61. № 9. С. 3103-3110.        

Dated from 2001 to 2010

  • PULSE POWER GENERATION IN NANO- AND SUBNANOSECOND RANGE BY MEANS OF IONIZING FRONTS IN SEMICONDUCTORS: THE STATE OF THE ART AND FUTURE PROSPECTS Grekhov I.V. IEEE Transactions on Plasma Science. 2010. Т. 38. № 5. С. 1118-1123.      
  • INTERFACE TRAPS DENSITY-OF-STATES AS A VITAL COMPONENT FOR HOT-CARRIER DEGRADATION MODELING Tyaginov S.E., Triebl O., Cervenka J., Grasser T., Starkov I.A., Ceric H., Jungemann C., Carniello S., Park J.M., Enichlmair H., Seebacher E., Minixhofer R., Karner M., Kernstock C. Microelectronics Reliability. 2010. Т. 50. № 9-11. С. 1267-1272.      
  • A LOW-JITTER 1.8-KV 100-PS RISE-TIME 50-KHZ REPETITION-RATE PULSED-POWER GENERATOR Merensky L.M., Pokryvailo A., Kesar A.S., Kardo-Sysoev A.F., Flerov A.N., Shmilovitz D. IEEE Transactions on Plasma Science. 2009. Т. 37. № 9 Part 2. С. 1855-1862.  
  • NOVEL CLOSING SWITCHES BASED ON PROPAGATION OF FAST IONIZATION FRONTS IN SEMICONDUCTORS Grekhov I.V., Korotkov S.V., Rodin P.B. IEEE Transactions on Plasma Science. 2008. Т. 36. № 2 Part 1. С. 378-382.  
  • ELECTROTUNABLE IN-PLANE ONE-DIMENSIONAL PHOTONIC STRUCTURE BASED ON SILICON AND LIQUID CRYSTAL Tolmachev V.A., Perova T.S., Grudinkin S.A., Melnikov V.A., Astrova E.V., Zharova Yu.A. Applied Physics Letters. 2007. Т. 90. № 1. С. 011908.   
  • TEMPERATURE DEPENDENCE OF THE CURRENT GAIN IN POWER 4H-SIC NPN BJTS Ivanov P.A., Levinshtein M.E., Agarwal A.K., Krishnaswami S., Palmour J.W. IEEE Transactions on Electron Devices. 2006. Т. 53. № 5. С. 1245-1249. 
  • 1D PHOTONIC CRYSTAL FABRICATED BY WET ETCHING OF SILICON Tolmachev V.A., Astrova E.V., Pilyugina J.A., Perova T.S., Moore R.A., Vij J.K. Optical Materials. 2005. Т. 27. № 5. С. 831-835. 
  • ПОЛУПРОВОДНИКОВЫЕ НАНОСЕКУНДНЫЕ ДИОДЫ ДЛЯ РАЗМЫКАНИЯ БОЛЬШИХ ТОКОВ Грехов И.В., Месяц Г.А. Успехи физических наук. 2005. Т. 175. № 7. С. 735-744. (NANOSECOND SEMICONDUCTOR DIODES FOR PULSED POWER SWITCHING Grekhov I.V., Mesyats G.A. Physics-Uspekhi. 2005. Т. 48. № 7. С. 703-712). 
  • FIELD-ENHANCED IONIZATION OF DEEP-LEVEL CENTERS AS A TRIGGERING MECHANISM FOR SUPERFAST IMPACT IONIZATION FRONTS IN SI STRUCTURES Rodin P., Rodina A., Grekhov I. Journal of Applied Physics. 2005. Т. 98. № 9. С. 1-11. 
  • МОЩНЫЕ БИПОЛЯРНЫЕ ПРИБОРЫ НА ОСНОВЕ КАРБИДА КРЕМНИЯ О Б З О Р Иванов П.А., Левинштейн М.Е., Мнацаканов Т.Т. Физика и техника полупроводников. 2005. Т. 39. № 8. С. 897-913. (POWER BIPOLAR DEVICES BASED ON SILICON CARBIDE Ivanov P.A., Levinshtein M.E., Mnatsakanov T.T., Palmour J.W., Agarwal A.K. Semiconductors. 2005. Т. 39. № 8. С. 861-877). 
  • DETERMINATION OF THE HOLE EFFECTIVE MASS IN THIN SILICON DIOXIDE FILM BY MEANS OF AN ANALYSIS OF CHARACTERISTICS OF A MOS TUNNEL EMITTER TRANSISTOR Vexler M.I., Tyaginov S.E., Shulekin A.F. Journal of Physics: Condensed Matter. 2005. Т. 17. № 50. С. 8057-8068.      
  • STEADY-STATE AND TRANSIENT CHARACTERISTICS OF 10 KV 4H-SIC DIODES Levinshtein M.E., Ivanov P.A., Mnatsakanov T.T., Yurkov S.N., Singh R., Palmour J.W. Solid-State Electronics. 2004. Т. 48. № 5. С. 807-811.          
  • VERTICALLY ETCHED SILICON AS 1D PHOTONIC CRYSTAL Tolmachev V.A., Astrova E.V., Perova T.S., Vij J.K., Volchek B.Z. Physica Status Solidi (A) Applied Research. 2003. Т. 197. № 2. С. 544-548.      
  • ВЫСОКОВОЛЬТНЫЕ Р.В.Д.-ПЕРЕКЛЮЧАТЕЛИ СУБМЕГААМПЕРНЫХ ИМПУЛЬСОВ ТОКА МИКРОСЕКУНДНОГО ДИАПАЗОНА ДЛИТЕЛЬНОСТИ Грехов И.В., Козлов А.К., Коротков С.В., Степанянц А.Л. Приборы и техника эксперимента. 2003. Т. 46. № 1. С. 53-59. (HIGH-VOLTAGE RSD SWITCHES OF SUBMEGAAMPERE CURRENT PULSES OF MICROSECOND DURATION Grekhov I.V., Kozlov A.K., Korotkov S.V., Stepanyants A.L. Instruments and Experimental Techniques. 2003. Т. 46. № 1. С. 48-53).
  • DESIGN CRITERIA AND OPTICAL CHARACTERISTICS OF ONE-DIMENSIONAL PHOTONIC CRYSTALS BASED ON PERIODICALLY GROOVED SILICON Tolmachev V., Perova T., Berwick K. Applied Optics. 2003. Т. 42. № 28. С. 5679-5683.    
  • ОДНОМЕРНЫЙ ФОТОННЫЙ КРИСТАЛЛ, ПОЛУЧЕННЫЙ С ПОМОЩЬЮ ВЕРТИКАЛЬНОГО АНИЗОТРОПНОГО ТРАВЛЕНИЯ КРЕМНИЯ Толмачев В.А., Границына Л.С., Власова Е.Н., Волчек Б.З., Нащекин А.В., Ременюк А.Д., Астрова Е.В. Физика и техника полупроводников. 2002. Т. 36. № 8. С. 996-1000.(Версии: ONE-DIMENSIONAL PHOTONIC CRYSTAL OBTAINED BY VERTICAL ANISOTROPIC ETCHING OF SILICON Tolmachev V.A., Granitsyna L.S., Vlasova E.N., Volchek B.Z., Nashchekin A.V., Remenyuk A.D., Astrova E.V. Semiconductors. 2002. Т. 36. № 8. С. 932-935). 
  • SUPERFAST FRONTS OF IMPACT IONIZATION IN INITIALLY UNBIASED LAYERED SEMICONDUCTOR STRUCTURES Rodin P., Ebert U., Hundsdorfer W., Grekhov I.V. Journal of Applied Physics. 2002. Т. 92. № 4. С. 1971-1980.      
  • TUNNELING-ASSISTED IMPACT IONIZATION FRONTS IN SEMICONDUCTORS Rodin P., Ebert U., Hundsdorfer W., Grekhov I. Journal of Applied Physics. 2002. Т. 92. № 2. С. 958-964.           
  • OPTICAL SWITCH-ON OF SILICON CARBIDE THYRISTOR Levinshtein M.E., Ivanov P.A., Agarwal A.K., Palmour J.W. Electronics Letters. 2002. Т. 38. № 12. С. 592-593.     
  • ОДНОМЕРНЫЙ ФОТОННЫЙ КРИСТАЛЛ, ПОЛУЧЕННЫЙ С ПОМОЩЬЮ ВЕРТИКАЛЬНОГО АНИЗОТРОПНОГО ТРАВЛЕНИЯ КРЕМНИЯ Толмачев В.А., Границына Л.С., Власова Е.Н., Волчек Б.З., Нащекин А.В., Ременюк А.Д., Астрова Е.В. Физика и техника полупроводников. 2002. Т. 36. № 8. С. 996-1000. (ONE-DIMENSIONAL PHOTONIC CRYSTAL OBTAINED BY VERTICAL ANISOTROPIC ETCHING OF SILICON Tolmachev V.A., Granitsyna L.S., Vlasova E.N., Volchek B.Z., Nashchekin A.V., Remenyuk A.D., Astrova E.V. Semiconductors. 2002. Т. 36. № 8. С. 932-935). 
  • “PARADOXES” OF CARRIER LIFETIME MEASUREMENTS IN HIGH-VOLTAGE SIC DIODES Palmour J.W., Levinshtein M.E., Ivanov P., Rumyantsev S.L., Mnatsakanov T.T., Yurkov S.N., Singh R. IEEE Transactions on Electron Devices. 2001. Т. 48. № 8. С. 1703-1710.       
  • SM-ND AND SR ISOTOPE SYSTEMATICS OF SCHEELITE FROM THE GIANT AU(-W) DEPOSIT MURUNTAU (UZBEKISTAN): IMPLICATIONS FOR THE AGE AND SOURCES OF AU MINERALIZATION Kempe U., Belyatsky B., Krymsky R., Kremenetsky A., Ivanov P. Mineralium Deposita. 2001. Т. 36. № 5. С. 379-392.   

Dated from 1991 to 2000

  • EFFECTIVE REFRACTIVE INDEX AND COMPOSITION OF OXIDIZED POROUS SILICON FILMS Astrova E.V., Tolmachev V.A. Materials Science and Engineering: B. 2000. Т. 69. С. 142-148.    
  • DEEP DIFFUSION DOPING OF MACROPOROUS SILICON Astrova E.V., Voronkov V.B., Grekhov I.V., Nashchekin A.V., Tkachencko A.G. Physica Status Solidi (A) Applied Research. 2000. Т. 182. № 1. С. 145-150.   
  • PHYSICAL BASIS FOR HIGH-POWER SEMICONDUCTOR NANOSECOND OPENING SWITCHES Grekhov I.V., Mesyats G.A. IEEE Transactions on Plasma Science. 2000. Т. 28. № 5. С. 1540-1544.  
  • LATERAL CURRENT DENSITY FRONTS IN GLOBALLY COUPLED BISTABLE SEMICONDUCTORS WITH S-OR Z-SHAPED CURRENT VOLTAGE CHARACTERISTICS Meixner M., Schöll E., Wacker A., Rodin P. The European Physical Journal B – Condensed Matter and Complex Systems. 2000. Т. 13. № 1. С. 157-168.  
  • STEADY-STATE AND TRANSIENT FORWARD CURRENT-VOLTAGE CHARACTERISTICS OF 4H-SILICON CARBIDE 5.5 KV DIODES AT HIGH AND SUPERHIGH CURRENT DENSITIES Dyakonova N.V., Ivanov P.A., Levinshtein M.E., Palmour J.W., Rumyantsev S.L., Singh R., Kozlov V.A. IEEE Transactions on Electron Devices. 1999. Т. 46. № 11. С. 2188-2194.    
  • HIGH HOLE LIFETIME (3.8μS) IN 4H-S1C DIODES WITH 5.5 KV BLOCKING VOLTAGE Ivanov P.A., Levinshtein M.E., Irvine K.G., Kordina O., Palmour J.W., Rumyantsev S.L., Singh R. Electronics Letters. 1999. Т. 35. № 16. С. 1382-1383.  
  • STABILITY OF CURRENT FILAMENTS IN A BISTABLE SEMICONDUCTOR SYSTEM WITH GLOBAL COUPLING Alekseev A., Bose S., Rodin P., Schöll E. Physical Review E – Statistical Physics, Plasmas, Fluids, and Related Interdisciplinary Topics. 1998. Т. 57. № 3. С. 2640-2649.  
  • ПОЛУПРОВОДНИКОВЫЙ КАРБИД КРЕМНИЯ — ТЕХНОЛОГИЯ И ПРИБОРЫ О Б З О Р Иванов П.А., Челноков В.Е. Физика и техника полупроводников. 1995. Т. 29. № 11. С. 1921-1943.   
  • RECENT DEVELOPMENTS IN SIC SINGLE-CRYSTAL ELECTRONICS Ivanov P.A., Chelnokov V.E. Semiconductor Science and Technology. 1992. Т. 7. № 7. С. 863-880.    

Dated 1990 or before

  • NEW PRINCIPLES OF HIGH POWER SWITCHING WITH SEMICONDUCTOR DEVICES Grekhov I.V. Solid-State Electronics. 1989. Т. 32. № 11. С. 923-930.  
  • THEORY OF QUASI-DIODE OPERATION OF REVERSELY SWITCHED DINISTORS Gorbatyuk A.V., Grekhov I.V., Nalivkin A.V. Solid-State Electronics. 1988. Т. 31. № 10. С. 1483-1491.   
  • REFLECTIVITY ANISOTROPY OF SUPERCONDUCTING YBA2CU3O7-X SINGLE CRYSTALS IN THE A-B PLANE Petrov M.P., Grachev A.I., Krasinkova M.V., Nechitailov A.A., Prokofiev V.V., Poborchy V.V., Shagin S.I., Kartenko N.F. Solid State Communications. 1988. Т. 67. № 12. С. 1197-1200.      
  • ENERGY RELAXATION OF 2D ELECTRONS AT AN ALGAAS/GAAS HETEROJUNCTION AT HELIUM TEMPERATURES Kreschuk A.M., Martisov M.Yu., Polyanskaya T.A., Savelev I.G., Saidashev I.I., Shik A.Ya., Shmartsev Yu.V. Solid State Communications. 1988. Т. 65. № 10. С. 1189-1192.     
  • POWER DRIFT STEP RECOVERY DIODES (DSRD) Grekhov I.V., Efanov V.M., Kardo-Sysoev A.F., Shenderey S.V. Solid-State Electronics. 1985. Т. 28. № 6. С. 597-599.    
  • ФОРМИРОВАНИЕ ВЫСОКОВОЛЬТНЫХ НАНОСЕКУНДНЫХ ПЕРЕПАДОВ НАПРЯЖЕНИЯ НА ПОЛУПРОВОДНИКОВЫХ ДИОДАХ С ДРЕЙФОВЫМ МЕХАНИЗМОМ ВОССТАНОВЛЕНИЯ НАПРЯЖЕНИЯ Грехов И.В., Ефанов В.М., Кардо-Сысоев А.Ф., Шендерей С.В. Письма в Журнал технической физики. 1983. Т. 9. № 7. С. 435.   
  • HIGH-POWER SUBNANOSECOND SWITCH Grekhov I.V., Kardo-Sysoev A.F., Kostina L.S., Shenderey S.V. Electronics Letters. 1981. Т. 17. № 12. С. 422-423.     
  • SUBNANOSECOND CURRENT DROPS IN DELAYED BREAKDOWN OF SILICON P-N JUNCTIONS Grekhov I.V., Kardo-Sysoev A.F. Technical Physics Letters. 1979. Т. 5. № 8. С. 395.  (ФОРМИРОВАНИЕ СУБНАНОСЕКУНДНЫХ ПЕРЕПАДОВ ТОКА ПРИ ЗАДЕРЖКЕ ПРОБОЯ КРЕМНИЕВЫХ P-N-ПЕРЕХОДОВ Грехов И.В., Кардо-Сысоев А.Ф. Письма в Журнал технической физики. 1979. Т. 5. № 15. С. 950).