Theory and modeling of semiconductor devices


Theoretical study on dynamics and stability of injection and avalanche power switches, on current instabilities and nonlinear dynamics of self-organized current density patterns in semiconductor structures.


Analytical theory and modeling: large-area power devices are considered as 3D active nonlinear media and the methods of nonlinear dynamics are widely applied. Simulations are based on computer tools specially designed for full-scale device characterization. SILVACO cluster is appropriated by the laboratory, SYNOPSIS is used in cooperation with St. Petersburg Electrotechnical University.

Devices and phenomena:

  • Reversely Switched Dynistor (RSD)
  • GT0-like devices and power microelectronic multi-cell switching modules
  • Picosecond-range switches based on integrated hetero-optocouplers “Laser/LED-phototransistor”
  • Current instabilities and pattern formation in bistable semiconductor devices
  • Nonlinear and chaotic dynamics of current density patterns
  • Picosecond-range high-voltage switches based on impact ionization
  • Superfast waves of impact and Zener ionization
  • Picosecond-range generation of electron-hole plasma by impact ionization in bulk semiconductors


Andrey V. Gorbatyukprincipal researcher, Dr. Sci.
Pavel B. Rodinleading researcher, Dr. Sci.
Mikhail S. Ivanovjunior researcher
Last updated: September 2020