Overview:
Theoretical study on dynamics and stability of injection and avalanche power switches, on current instabilities and nonlinear dynamics of self-organized current density patterns in semiconductor structures.
Methods:
Analytical theory and modeling: large-area power devices are considered as 3D active nonlinear media and the methods of nonlinear dynamics are widely applied. Simulations are based on computer tools specially designed for full-scale device characterization. SILVACO cluster is appropriated by the laboratory, SYNOPSIS is used in cooperation with St. Petersburg Electrotechnical University.
Devices and phenomena:
- Reversely Switched Dynistor (RSD)
- GT0-like devices and power microelectronic multi-cell switching modules
- Picosecond-range switches based on integrated hetero-optocouplers “Laser/LED-phototransistor”
- Current instabilities and pattern formation in bistable semiconductor devices
- Nonlinear and chaotic dynamics of current density patterns
- Picosecond-range high-voltage switches based on impact ionization
- Superfast waves of impact and Zener ionization
- Picosecond-range generation of electron-hole plasma by impact ionization in bulk semiconductors
Contacts:
| Andrey V. Gorbatyuk | principal researcher, Dr. Sci. | |
| Pavel B. Rodin | leading researcher, Dr. Sci. | |
| Mikhail S. Ivanov | junior researcher |