Ph.D., researcher
Stanislav E. Tyaginov (b. 1978, grad. Phys-Tech Dept TU-SPb in 2002, joined Ioffe Inst in 1997) – researcher, Ph.D.; is on a long-duration business trip in Austria (TU Vienna). During many years he has been concentrated on the effects of insulator parameter fluctuations on the properties of MIS tunnel structures. Now he is developing the models of MIS device degradation due to hot electron transport under different operation conditions. Simultaneously, the work on improvement of the simulators of semiconductor structures in Vienna is done; the optimizing changes are being introduced in the corresponding blocks (e.g. tunnel current calculation).