Voronkov Vladimir Borisovich

Ph.D., senior researcher

v_b_voronkov_47@mail.ru

Name: Voronkov Vladimir Borisovich / Воронков Владимир Борисович

Birth: April 22, 1947, Leningrad (now St.-Petersburg)

Education, degrees:

  • 1966–1972: Leningrad Polytechnical Institute named after M.I. Kalinin
  • 1984: Ioffe Physical-Technical Institute, Ph.D. (candidate of technical sciences)

Work experience:

Ioffe Physical-Technical Institute, since 1965

Research interests:

  • technology of silicon-based semiconductor devices;
  • study of the static and dynamic characteristics of the fabricated devices;
  • study toward the transient processes during commutation of the Megawatt-power pulses in the nano- and micro- second range
  • Silicon diodes for the Li-ion accumulators

Academic awards:

Laureate of the internal concours at the Ioffe Institute for the best scientific work, 2005

Projects:

  • several grants from the RFBR
  • the fundamental research program of the presidium of the Russian Academy of Sciences, No. 31