Gorbatyuk Andrey Vasilyevich

Fields of interest:

• Theory and simulation of power semiconductor electronic and optronic devices, including integrated circuits
• Search for new mechanisms of ultra-fast performances of power devices
• Instability problems and safe operating conditions in pulse power devices
• Nonlinear physics, self-organization and pattern formation in Solid-St. Electronics

Professional career:

1. Full-time employee at Ioffe Physico-technical Institute since 1979, successively in scientific post positions from junior researcher (1980) to principal researcher (2014 till now)
2. 1976-1979: Senior researcher at V.I. Lenin All-Russia Electrotechnical Institute, High-Voltage Division, Istra-2, Moscow Region, USSR
3. 1971-1975: Post-graduate  student at A.F. Ioffe Physico-Technical Institute, Leningrad, USSR
4. 1969-1971: Research Engineer at the Institute of Electronics of the Odessa Politechnical Institute, Odessa, Ukrainian Republic, USSR.

Academic titles:

• Professor (from Supreme attestation commission of Russia, 2011)
• Certified Senior Researcher in Physics (from Supreme attestation commission of the USSR, 1988)

Education, degrees :

• Doctor of Science in physics and maths (from the Ioffe Institute, 2003)
• Ph.D. in physics and maths. (from the Ioffe Institute, 1981)
• Electronic technology engineer (from the Odessa Politechnical Institute, Odessa, Ukrainian Republic, USSR, 1969)

Teaching :

• Saint Petersburg Polytechnical University, Faculty of Physics and Technology, Department of Solid State Electronics: graduate courses “Physics of Semiconductor Devices“ (2004-2006), “Instability and Stratification of Current in Semiconductor Structures“ (2004-2012), “Basic Microelectronics” (2012-2013)  —  part-time professor (2004-2013), author of the manual (2009)
• Saint Petersburg Electro-technical  University (LETI), (2006-2009) – invited lecturer, co-author of the electronic manual (2011) 
• Saint Petersburg Polytechnical University, Faculty of Physics and Technology, Department of Solid State Electronics (1996-2003): graduate course “Physics of Semiconductor Devices“ –  part-time associated-professor
• The Ioffe Institute – supervisor of academic degree applicants (PhD defended in 1990, 1992, 1993, 2012)
• The Ioffe Institute, International winter school (2003) – invited speaker

Russian grants, contracts:

• RFBR (4): No. 07-08-00689; No. 13-08-00474, No. 13-07-00943, No 16-08-01292
• RSF: No. 14-29-00094
• State Contract No. 02.526.12.6016 (Federal Agency for Science and Innovations, 2007/12 y.)

The Ioffe Service:

              Member of the dissertation councils:

• K 003.23.01   “Semiconductors and dielectrics” (1985-2005)
• Д 002.205.02  “Semiconductors ” (2005 – 2019)
• 34.01.02  “Semiconductors ” (2020 –  till present)

Visiting researcher:

• Institute of Applied Physics at Muenster University, Germany (in 1991 and regularly in 1993-2003. Total – 2 years)

Selected publications:

• Gorbatyuk A.V., Ivanov B.V. Inhomogeneous injection and heat-transfer processes in reversely switched dynistors operating in pulse-frequency repetition modes with a limited heat sink, Semiconductors, v. 53, No. 4, p. 524-529 (2019)
• Gorbatyuk A.V., Ivanov B.V. Simulation of reversely switched dynistors in modes with lowered primary-ignition threshold, Semiconductors, v. 51, No 6, p. 803-811 (2017)
• Slipchenko S. O., Podoskin A. A., Pikhtin N. A., Tarasov I. S., Gorbatyuk A. V. Model of steady-state injection processes in a high-power laser-thyristor based on heterostructure with internal optical feedback, IEEE Transactions on Electron Devices, v. 62, No. 1, pp. 149-154 (2015)
• Gorbatyuk A.V., Gusin D.V., Ivanov B.V. Theory and simulation of combined mechanisms limiting the safe operating area power semiconductor microelectronic switches, Semiconductors, v. 47, No. 3, p. 396-405 (2013)
• Горбатюк А. В. Неустойчивости и расслоения тока в полупроводниковых структурах (учеб. пособие), СПб.: Изд-во Политех. ун-та, 79 с (2009)   ISBN 978-5-7422-2340-5
• Gorbatyuk A.V. Latent spatial instability of current in power bipolar switches, Technical Physics Letters, v. 32, No. 12, p. 999-1002 (2006) 
• Niedernostheide F.-J., Schulze H.-J., Freyd O., Bode M., Gorbatyuk A.V. Realization of a neural algorithm by means of front propagation in a thyristor-based hybrid system, Chaos, Solitons & Fractals, v. 17, No. 2-3, p. 255-262 (2003)
• Gorbatyuk A. V., Niedernostheide F. J. Spatial current-density instabilities in multilayered semiconductor structures, Physical Review B, v. 65, No. 24, ArtNo#245318, 15 p. (2002)
• Gorbatyuk A. V., Grekhov I. V., Nalivkin A. V. Theory of quasi-diode operation of Reversely Switched Dinistors // Solid-State Electronics,  v. 31, No. 10, pp. 1483-1491 (1988)
• Grekhov I. V., Gorbatyuk A. V., Kostina L. S., Korotkov S. V., Jakovtchuk N. S. Superpower switch of microsecond range, Solid-State Electronics, v. 26, No. 11, p. 1132 (1983).

Awards:

• Bronze medal of the Exhibition of Achievements of National Economy USSR in 1986
• USSR State Prize in Science and Technology in 1987