Laboratory of Power Semiconductor Devices

Activities in the laboratory are focused on the basic and applied research of power semiconductor devices, as well as on some other topics of the condensed-matter physics. The laboratory belongs to the Solid-State Electronics (SSE) Division of the Ioffe Physical-Technical Institute of the Russian Academy of Sciences (RAS).

Jobs, practica / Вакансии:

Information for students, for postdocs, for technicians seeking employment or practica place

Top scientific consultant:

Grekhov, Igor Vsevolodovich (Prof., Dr.Sci., Academician of the Russian Academy of Sciences)

Head of the Laboratory

Vexler, Mikhail Isaacovich (Dr.Sci., Professor of the Russian Academy of Sciences)

Deputy Head of the Laboratory

Saydashev, Ibragim Ibragimovich (Ph.D.)

Secretariat

Mayorova, Angelika Vladimirovna

Location of the Laboratory:

Ioffe Institute, building A, 6-th floor

See also: List of current extrabudgetary projects

• Power semiconductor electronics and pulse switching technique
• Power devices on wide-bandgap semiconductors
• Theory and modeling of semiconductor devices
• Metal – tunnel insulator – semiconductor structures
• Technology of Silicon micro and nanostructuring
• Thin-film ferroelectric heterostructures
• Hydrogen energetics
• Fabrication and characterization of Silicon nanowires
• Ellipsometry of thin films, layers of nanoparticles, textured structures 
• Technology of Molecular beam epitaxy of semiconducting, insulating and magnetic materials

The devices and circuits developed in the laboratory are used in power pulse generators for the (sub)micro-, nano- and pico- second ranges, produced by the JSC “Megaimpulse” allied with the laboratory and by the FID Technology GmbH.

• by year (since 2011)
• by research subject
• the most cited

The history of the laboratory goes back to early 1960s. Traditionally, its research activities were primarily focused on pulse power devices.

The founder of the laboratory Professor Igor Grekhov, in 1960-1975, was one of the principal members of the team (led by V.M. Tuchkevich) whose work provided a basis for establishing the high current semiconductor device components industry in the USSR. This allowed a drastic reduction of energy consumption in power supply applications.

The research efforts resulted in invention of the new-type high-voltage pulse power semiconductor devices covering the duration range of the switched electric pulses from hundreds microseconds to dozens of picoseconds. These devices have found numerous applications for power lasers, accelerators, wide-band radar engineering and many other research and industrial technologies.

The major silicon devices developed at the laboratory are:

– reversely switched dynistors (RSD), microsecond range;

– drift step recovery diodes (RSRD), nanosecond range;

– silicon avalanche sharpening diodes (SAS), subnanosecond range;

– field-controlled integrated thyristors, microsecond range.

Apart from Si devices, the laboratory is performing research and development of the SiC high-voltage and pulse power devices.

Other topics of solid-state physics such as high temperature superconductivity, ferroelectric (PZT) memories, tunneling MOS structures, optoelectronics of porous Si were also studied in the laboratory.

Laboratory of Power Semiconductor Devices (LPSD)

Ioffe Physical-Technical Institute

E-mail: vexler@mail.ioffe.ru