Ph.D., senior researcher, vice executive secretary
Name: Ibragim Saydashev / Ибрагим Ибрагимович Сайдашев
Birth: 20 November 1941, Kuybyshev, USSR (now Samara, Russia)
Ibragim I. Saydashev has been working at the Ioffe Institute since 1970. His research is aimed at studying kinetic effects in semiconductors and semiconductor structures. He took part in the development of highly sensitive radiation detectors (under the aegis of a special program of the USSR Ministry of Economic Development). Since the beginning of the 1980s his interests were predominately focused on the study of quantum galvanomagnetic and coherent effects in the conductivity of semiconductor structures with a reduced dimension of electron gas. He obtained a number of fundamental results in the physics of transport phenomena in the low-dimensional electronic systems.
Education, employment:
- Ioffe Institute: staff member since 1970, Ph.D. 1988
- Arbuzov Institute of Organic and Physical Chemistry of the FRC Kazan, 1968-1970
- Kazan University: 1968, specialist
Fields of interests:
- Semiconductor devices
- Effects in the conductivity of semiconductors and semiconductor structures with a reduced dimension of the electron gas.
Selected publications:
- Strongly non-linear carbon nanofibre influence on electrical properties of polymer composites // Biryulin Yu., Kurdybaylo D., Volkova T., Saydashev I., Eidelman E., Makarova T., Terukov E., Zaitseva N., Shamanin V., Aleksjuk G., Melenevskaya E., Negrov V., Tkatchyov A. // Fullerenes Nanotubes and Carbon Nanostructures, v. 16, № 5-6, pp. 629-633 (2008).
- Исследование свойств двумерного электронного газа в гетероструктурах P–-3C-SIC/N+-6H-SIC при низких температурах // Лебедев А.А., Нельсон Д.К., Разбирин Б.С., Сайдашев И.И., Кузнецов А.Н., Черенков А.Е. // Физика и техника полупроводников, т. 39, № 10, с. 1236-1238 (2005).
- The conductivity and Hall effect in CDF”2:IN and CDF”2:Y // Saǐdashev I.I., Perlin E.Yu., Ryskin A.I., Shcheulin A.S. // Semiconductors, v. 39, № 5, c. 506-513 (2005).
- Electro-optic modulation in quantum wells in transverse and longitudinal strong electric fields // Vorobjev L.E., Zibik E.A., Titkov I.E., Firsov D.A., Shalygin V.A., Towe E., Nashchokina O.N., Saydashev I.I. // В сборнике: Conference on Lasers and Electro-Optics Europe – Technical Digest Proceedings of the 1998 International Symposium on Information Theory, CLEO/EUROPE’98. Glasgow, Scotland, p. 115 (1998).
- Modulation of optical absorption of GaAs/AlGaAs quantum wells in a transverse electric field // Vorobjev L.E., Zibik E.A., Firsov D.A., Shalygin V.A., Nashchekina O.N., Saǐdashev I.I. // Semiconductors., v. 32, № 7, c. 754-756 (1998).
- Electro-optical phenomena accompanying electron and hole heating in superlattices and quantum wells GaAs/AlGaAs and Ge/SiGe // Vorobjev L.E., Danilov S.N., Zibik E.A., Firsov D.A., Shalygin V.A., Shik A.Ya., Saidashev I.I., Aleshkin V.Ya., Kuznetsov O.A., Orlov L.K. // Superlattices and Microstructures, v. 22, № 4, c. 467-473 (1997).
- Двулучепреломление и поглощение света при межподзонных переходах горячих электронов в квантовых ямах // Воробьев Л.Е., Сайдашев И.И., Фирсов Д.А., Шалыгин В.А. // Письма в ЖЭТФ, том 65, вып. 7, стр. 525.
- Birefringence and absorption of light during intersubband transitions of hot electrons in quantum wells // Vorob’ev L.E., Firsov D.A., Shalygin V.A., Saǐdashev I.I. // Journal of Experimental and Theoretical Physics Letters (JETP Letters), v. 65, № 7, pp. 549-554 (1997).
- Structures with 2DEG in the InP/InGaAs system obtained with LPE method // Vorob’eva V.V., Egorova M.V., Kreshchuk A.M., Novikov S.V., Savel’ev I.G., Saidashev I.I. // Письма в Журнал технической физики, т. 15, № 11, с. 73 (1989).
- Energy relaxation of 2D electrons at an AlGaAs/GaAs heterojunction at helium temperatures // Kreschuk A.M., Martisov M.Yu., Polyanskaya T.A., Savel’ev I.G., Saidashev I.I., Shik A.Ya., Shmartsev Yu.V. // Solid State Communications, v. 65, № 10, pp. 1189-1192 (1988).
- Fabrication of heterostructures with a two-dimensional electron gas my conventional liquid phase epitaxy // Golubev L.V., Kreshchuk A.M., Novikov S.V., Polyanskaya T.A., Savel’ev I.G., Saidashev I.I. // Физика и техника полупроводников, т. 22, с. 1948 (1988).
- Two-dimensional electron gas by conventional liquid phase epitaxy // Golubev L.V., Kreschuk A.M., Novikov S.V., Polyanskaya T.A., Savel’ev I.G., Saidashev I.I. // Semiconductors, v. 22. p. 1234 (1988).
- Two-dimensional electron gas in InGaAs/InP heterostructures prepared by liquid phase epitaxy // Alferov Z.I., Gorelenok A.T., Kamanin A.V., Mamutin V.V., Polyanskaia T.A., Savel’ev I.G., Saidashev I.I., Shmartsev Y.V. // Semiconductors, v. 18, № 7, p. 768 (1984).
- Structure of reaction products of benzylidenemalononitrile with tri(demithylamino)phosphine, trimethylphosphite and dimethylphosphorous acid // Arbuzov B.A., Polezhaeva N.A., Vinogradova V.S., Saidashev I.I. // Bulletin of the Academy of Sciences of the USSR. Division of Chemical Sciences, v. 20, № 12, pp. 2618-2622 (1971).
- Динамическая поляризация ядер P31, индуцированная химическими реакциями // Левин Я.А., Ильясов А.В., Победимский Д.Г., Гольдфарб Э.И., Сайдашев И.И., Самитов Ю.Ю. // Известия Академии наук СССР. Серия химическая, № 7, c. 1680 (1970).