Saydashev Ibragim Ibragimovich

Ph.D., senior researcher, vice executive secretary

Name: Ibragim Saydashev / Ибрагим Ибрагимович Сайдашев

Birth:  20 November 1941, Kuybyshev, USSR (now Samara, Russia)

Ibragim I. Saydashev has been working at the Ioffe Institute since 1970. His research is aimed at studying kinetic effects in semiconductors and semiconductor structures. He took part in the development of highly sensitive radiation detectors (under the aegis of a special program of the USSR Ministry of Economic Development). Since the beginning of the 1980s his interests were predominately focused on the study of quantum galvanomagnetic and coherent effects in the conductivity of semiconductor structures with a reduced dimension of electron gas. He obtained a number of fundamental results in the physics of transport phenomena in the low-dimensional electronic systems.

Education, employment:

  • Ioffe Institute: staff member since 1970, Ph.D. 1988
  • Arbuzov Institute of Organic and Physical Chemistry of the FRC Kazan, 1968-1970
  • Kazan University: 1968, specialist

Fields of interests:

  • Semiconductor devices
  • Effects in the conductivity of semiconductors and semiconductor structures with a reduced dimension of the electron gas.

Selected publications: