Mikhaylov Evgeniy Mikhaylovich

Education:

• 2008-2012. Full-time bachelor program of the Faculty of Physics and Technology at St. Petersburg State Polytechnic University. The B.S. degree in technical physics was awarded (2012). Thesis title: “Study of the nature of dislocations in gallium nitrides by transmission electron microscopy”;
• 2012-2014. Full-time master program of the Institute of Physics, Nanotechnology and Telecommunications (IFNIT) at St. Petersburg State Polytechnic University. The M.S. degree in physics was awarded (2014). Thesis: “Filtration of germinating dislocations by the effect of spontaneous transformation of the structure in AlGaN layers according to transmission electron microscopy (TEM)”. It was prepared under a guidance of Dr. A.A. Sitnikova in the laboratory for diagnostics of materials and structures of the solid-state electronics division at the Ioffe Institute;
• Since 2015. Graduate school of the Ioffe Institute. The theme of the prospective dissertation: “Investigation of physical processes in limiting operating modes of integrated thyristors”.

Fields of interest:

Integrated thyristor. Solid-State Electronics. Power semiconductor devices.  

Projects:

• РНФ [Russian Science Foundation] «Физико-технические проблемы силовой импульсной полупроводниковой электроники нано- и пико- секундного диапазона», 2018;
• Программа Президиума РАН №31 [Program of the Presidium of the Russian Academy of Sciences] «Фундаментальные исследования физико-технических проблем энергетики», 2019.