researcher, leading technologist
Irina A. Smirnova joined Ioffe Institute staff after graduation from St.Petersburg State University in 1981. The sphere of interest is physics and technology of power semiconductor devices. She is an expert in technological processes of designing and manufacturing high voltage silicon diodes and thyristors.
Name: Irina Smirnova / Ирина Анатольевна Смирнова
Born: 05 May 1958, St. Petersburg, Russia
Education
1991 Ioffe Institute, post graduate
1981 St. Petersburg University, department of solid-state electronics, specialist
Professional activity
- Ioffe Institute, lab of power semiconductor devices, lab of physics of fast processes in semiconductors, lab of power semiconductor devices
- leading technologist / researcher (acting) (2014)
- graduate employee (1981), junior researcher (1983), researcher (2000?)
- Designing of Drift Step Recovery Diodes (DSRD) for different risetime range (1000 V/1 ns, 500 V/0.5 ns, 200 V/0.2 ns, 100 V/0.1 ns), Silicon Avalanche Shaper (SAS) for picosecond switching, high current (1-4 kA) thyristors with operating voltage 1800 V and risetime ~500 ns.
Fields of interest
- Silicon technology: impurity diffusion and implantation, oxidation, lithography, metallization, packaging, testing of processes and devices
- Investigation of power devices characteristics and transient processes
- Silicon diodes and thyristors for pulse power applications
Selected publications
- V.A.Kozlov, I.A. Smirnova, S.A. Moryakova, A.F. Kardo-Sysoev, New generation of drift step recovery diodes (DSRD) for subnanosecond switching and high repetition rate operation, IEEE 0-78037540-8/02 2002 (Hollywood, CA, International Power Modulator Symposium and High Voltage Workshop)
- V.I. Brylevsky, A.F. Kardo-Sysoev, Y.S. Lilikov, I.A. Smirnova, I.G.Tchashnikov, V.V. Karavaev, The fast power thyristors, IEEE 0-7803-4214-3/97 1997 (Baltimore, MD, 11th IEEE International Pulsed Power Conference)
- V.I. Brylevsky, V.M. Efanov, A.F. Kardo-Sysoev, I.A. Smirnova, I.G.Tchashnicov, The fast modulator thyristor, IEEE 0-7803-3076-53/96 1996 (Boca Raton, FL, International Power Modulator Symposium and High Voltage Workshop)
- Brylevskiy V.I., Smirnova I.A., Rozhkov A.V., Brunkov P.N., Rodin P.B., Grekhov I.V. Picosecond-Range Avalanche Switching of High-Voltage Diodes: Si Versus GaAs Structures, IEEE Trans. Plasma Sci., v.44, 10, p.1941-1946, http://dx.doi.org/10.1109/TPS.2016.2561404