Yusupova Shaira Abduvalievna

researcher, Ph.D.

email: sh.yusupova@mail.ioffe.ru

Name:

Yusupova Shaira Abduvalievna / Юсупова Шаира Абдувалиевна

Birth:

October 2, 1960, Uzbekistan, USSR

Education:

  • Tashkent State University named after V.I. Lenin (now: National University of Uzbekistan), Department of Physics, diploma with honors, 1983;
  • The Ioffe Institute, research internship;
  • Postgraduate school of the Ioffe Institute, PhD, 1998.

Employment:

Mrs. Yusupova has been working at the Ioffe Physical-Technical Institute since 1990 in various positions. Now she is employed as a researcher in the Laboratory of Power semiconductor devices.

Research interest:

  • R&D of power semiconductor switching devices, particularly of the SOS (Silicon opening switch) diodes and of the pulse-sharpening diodes
  • Study of the impact of technology process on the morphology, optical and electro-physical properties of semiconductor crystals

Recent publications:

  • Utamuradova,Sh; Yusupova,Sh; Fayzullaev,K. Impurity-impurity interaction in silicon doped with manganese and nickel; Semiconductor Physics and Microelectronics, 2020, volume 2, issue 6, pp.9-12, DOI: https://doi.org/10.37681/2181-9947-019-X
  • Banshchikov,AG; Dvortsova,PA; Illarionov,YuYu; Ivanov,IA; Sokolov,NS; Suturin,SM; Vexler,MI; Yusupova,ShA; Effect of fluoride layer thickness on the leakage current in Au/CaF2/Si(111) heterostructures. Thin Solid Films, v. 783, Paper No. 140058 [5 pages] (2023). DOI: https://doi.org/10.1016/j.tsf.2023.140058
  • Daliev,KhS; Daliev,ShKh; Bekmuratov,MB; Fayzullaev,KM; Yusupova,ShA. Influence of yterbium atoms on the formation of radiation defects when irradiating silicon with 60Co γ−quantums. World Journal of Engineering Research and Technology (WJERT). 2024, Vol. 10, Issue 3, pp.xx (In press)

  • Банщиков,АГ; Белякова,ЕИ; Векслер,МИ; Grasser,T; Илларионов,ЮЮ; Knobloch,T; Соколов,НС; Юсупова,ША. Изучение особенностей туннельного переноса заряда через нанометровые слои фторида кальция на кремнии-(111). Book of abstracts of the 2nd Intl. Conf. on High Energy Physics, Material Science and Nanotechnology (ICHEPMS), pp. 57–58, February 15-16, 2024, Almaty, Kazakhstan, ISBN 978-601-08-3798-0
  • Ataboev,OK; Utamuradova,ShB; Yusupova,ShA; Akbarov,FA.; Yangibayev,BY. Impact of ultrasonic irradiation on the photoelectric characteristics of the heterostructure based on nCdSxTe1-x – pZnyCd1-yTe solid solutions. Book of abstracts of the 2nd Intl. Conf. on High Energy Physics, Material Science and Nanotechnology (ICHEPMS), pp. 60–61, February 15-16, 2024, Almaty, Kazakhstan, ISBN 978-601-08-3798-0
  • Akbarov,FA; Ataboev,OK; Yusupova,ShA; Yangibayev,BY. Study of spectral characteristics of the CIGS solar cells. Book of abstracts of the 2nd Intl. Conf. on High Energy Physics, Material Science and Nanotechnology (ICHEPMS), pp. 66–67, February 15-16, 2024, Almaty, Kazakhstan, ISBN 978-601-08-3798-0
  • Utamuradova,ShB; Fayzullaev,KM; Rakhmanov,DA; Yusupova,ShA. The process of defect formation in Silicon doped with transition elements. Book of Abstracts of the 1st Intl. Conf. on LOw-Dimensional Advanced Materials (ICLODAM), pp. 36–37, February 18-22, 2024, Samarkand and Tashkent, Uzbekistan
  • Banshchikov,AG; Belyakova,EI; Dvortsova,PA; Illarionov,YY; Sokolov,NS; Suturin,SM; Vexler,MI; Yusupova,ShA. Epitaxially grown Calcium Fluoride as insulating material in two-dimensional solid-state devices. Book of Abstracts of the 1st Intl. Conf. on LOw-Dimensional Advanced Materials (ICLODAM), pp. 80–81, February 18-22, 2024, Samarkand and Tashkent, Uzbekistan
  • Калинина,Е; Орехова,К; Кудояров,М; Пойрова,М; Забродский,В; Юсупова,Ш. Влияние облучения ионами Ar на оптические характеристики/4H-SiC фотодетекторов. Первая Всероссийская конференция по люминесценции LUMOS-2024. Москва, МГУ, 23-26 апреля 2024 г. [доклад принят]